Advancement in transistor technologies using GaN, TiO2, and GeSn materials

Zeng, Yuping

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This content will become publicly available on August 1, 2026

Advancement in transistor technologies using GaN, TiO2, and GeSn materials

Award ID(s):: 2239302

PAR ID:: 10623943

Author(s) / Creator(s):: Zeng, Yuping

Publisher / Repository:: IEEE

Date Published:: 2025-08-01

Format(s):: Medium: X

Location:: Duke University, Device Research Conference 2025, June 22-26, 2025

Sponsoring Org:: National Science Foundation

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This content will become publicly available on August 1, 2026
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