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Zeroth-order methods are extensively used in machine learning applications where gradients are infeasible or expensive to compute, such as black-box attacks, reinforcement learning, and language model fine-tuning. Existing optimization theory focuses on convergence to an arbitrary stationary point, but less is known about the implicit regularization that provides a fine-grained characterization of which particular solutions are reached. This paper shows that zeroth-order optimization with the standard two-point estimator favors solutions with small trace of Hessian, a measure widely used to distinguish between sharp and flat minima. The authors provide convergence rates of zeroth-order optimization to approximate flat minima for convex and sufficiently smooth functions, defining flat minima as minimizers that achieve the smallest trace of Hessian among all optimal solutions. Experiments on binary classification tasks with convex losses and language model fine-tuning support the theoretical findings.
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This content will become publicly available on May 18, 2026
Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs
Zeroth-order fine-tuning eliminates explicit back-propagation and reduces memory overhead for large language models (LLMs), making it a promising approach for on-device fine-tuning tasks. However, existing memory-centric accelerators fail to fully leverage these benefits due to inefficiencies in balancing bit density, compute-in-memory capability, and endurance-retention trade-off. We present a reliability-aware, analog multi-level-cell (MLC) eDRAM-RRAM compute-in-memory (CIM) solution co-designed with zeroth-order optimization for language model fine-tuning. An RRAM-assisted eDRAM MLC programming scheme is developed, along with a process-voltage-temperature (PVT)-robust, large-sensing-window time-to-digital converter (TDC). The MLC-eDRAM integrating two-finger MOM provides 12× improvement in bit density over state-of-the-art MLC design. Another 5× density and 2× retention benefits are gained by adopting BEOL In2O3 FETs.
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- Award ID(s):
- 2425498
- PAR ID:
- 10625480
- Publisher / Repository:
- IEEE
- Date Published:
- ISSN:
- 2573-7503
- ISBN:
- 979-8-3503-6298-5
- Page Range / eLocation ID:
- 1 to 4
- Format(s):
- Medium: X
- Location:
- Monterey, CA, USA
- Sponsoring Org:
- National Science Foundation
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