An official website of the United States government
In this work, we demonstrate the growth and phase stabilization of ultrawide bandgap polycrystalline rutile germanium dioxide (GeO2) thin films. GeO2 thin films were deposited using RF magnetron sputtering on r-plane sapphire (Al2O3) substrates. As-deposited films were x-ray amorphous. Postdeposition annealing was performed at temperatures between 650 and 950 °C in an oxygen or nitrogen ambient. Annealing at temperatures from 750 to 950 °C resulted in mixed-phase polycrystalline films containing tetragonal (rutile) GeO2, hexagonal (α-quartz) GeO2, and/or cubic (diamond) germanium (Ge). When nitrogen was used as the anneal ambient, mixed GeO2 phases were observed. In contrast, annealing in oxygen promoted stabilization of the r-GeO2 phase. Grazing angle x-ray diffraction showed a preferred orientation of (220) r-GeO2 for all crystallized films. The combination of O2 annealing and O2 flux during growth resulted in r-GeO2 films with highly preferential alignment. Using electron microscopy, we observed an interfacial layer of hexagonal-oriented GeO2 with epitaxial alignment to the (11¯02) Al2O3 substrate, which may help stabilize the top polycrystalline r-GeO2 film.
more »
« less
This content will become publicly available on July 22, 2026
Formation of Nanostructured Rutile Germanium Dioxide Polycrystalline Thin Films
Rutile germanium oxide (r-GeO2), an ultrawide bandgap semiconductor, is a promising material for next-generation power electronics. Understanding and controlling the structure and morphology of r-GeO2 thin films are crucial for advancing their integration into future devices. In this work, r-GeO2 thin films were grown using RF magnetron sputtering on r plane sapphire substrates. Postdeposition annealing (PDA) was performed in an oxygen ambient atmosphere to crystallize the films. PDA at 950 °C resulted in the formation of needle-like nanostructures, predominantly originating at the edges of the film and growing inward toward the sample center. Sequential annealing at increasing temperatures indicated that these needle-like structures begin forming at temperatures above 925 °C. Next, the effect of the PDA duration on the structure was studied. It was seen that PDA at 950 °C for durations of 1 to 15 min promoted formation of the rutile phase, and extending the PDA duration allowed greater surface coverage of the nanostructures. However, annealing even longer, i.e., for 120 min, resulted in mixed phases of α-quartz and rutile GeO2. These findings demonstrate that controlling the PDA temperature and duration can effectively modulate the morphology of rutile-phase GeO2 thin films.
more »
« less
- PAR ID:
- 10628140
- Publisher / Repository:
- American Chemical Society (ACS)
- Date Published:
- Journal Name:
- ACS Applied Electronic Materials
- Volume:
- 7
- Issue:
- 14
- ISSN:
- 2637-6113
- Page Range / eLocation ID:
- 6476 to 6483
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
In dusty plasma environments, spontaneous growth of nanoparticles from reactive gases has been extensively studied for over three decades, primarily focusing on hydrocarbons and silicate particles. Here, we introduce the growth of titanium dioxide, a wide bandgap semiconductor, as dusty plasma nanoparticles. The resultant particles exhibited a spherical morphology and reached a maximum monodisperse radius of 235 ± 20 nm after growing for 70 s. The particle grew linearly, and the growth displayed a cyclic behavior; that is, upon reaching their maximum radius, the largest particles fell out of the plasma, and the next growth cycle immediately followed. The particles were collected after being grown for different amounts of time and imaged using scanning electron microscopy. Further characterization was carried out using energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy to elucidate the chemical composition and crystalline properties of the maximally sized particles. Initially, the as-grown particles exhibited an amorphous structure after 70 s. However, annealing treatments at temperatures of 400 and 800 °C induced crystallization, yielding anatase and rutile phases, respectively. Annealing at 600 °C resulted in a mixed phase of anatase and rutile. These findings open avenues for a rapid and controlled growth of titanium dioxide via dusty plasma.more » « less
-
Among group VI transition metal dichalcogenides, MoTe 2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al 2 O 3 -encapsulated 2H-MoTe 2 thin films to 1T′-MoTe 2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe 2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation.more » « less
-
Beta-phase gallium oxide ([Formula: see text]-Ga 2 O 3 ) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the [Formula: see text]-phase, numerous other polymorphs exist and understanding the competition between phases is critical to control practical devices. The phase formation sequence of Ga 2 O 3 , starting from amorphous thin films, was determined using lateral-gradient laser spike annealing at peak temperatures of 500–1400 °C on 400 μs to 10 ms timescales, with transformations characterized by optical microscopy, x-ray diffraction, and transmission electron microscopy (TEM). The resulting phase processing map showed the [Formula: see text]-phase, a defect-spinel structure, first nucleating under all annealing times for temperatures from 650 to 800 °C. The cross-sectional TEM at the onset of the [Formula: see text]-phase formation showed nucleation near the film center with no evidence of heterogeneous nucleation at the interfaces. For temperatures above 850 °C, the thermodynamically stable [Formula: see text]-phase was observed. For anneals of 1–4 ms and temperatures below 1200 °C, small randomly oriented grains were observed. Large grains were observed for anneals below 1 ms and above 1200 °C, with anneals above 4 ms and 1200 °C resulting in textured films. The formation of the [Formula: see text]-phase prior to [Formula: see text]-phase, coupled with the observed grain structure, suggests that the [Formula: see text]-phase is kinetically preferred during thermal annealing of amorphous films, with [Formula: see text]-phase subsequently forming by nucleation at higher temperatures. The low surface energy of the [Formula: see text]-phase implied by these results suggests an explanation for the widely observed [Formula: see text]-phase inclusions in [Formula: see text]-phase Ga 2 O 3 films grown by a variety of synthesis methods.more » « less
-
ABSTRACT Polydopamine (PDA) is a biopolymer, which can form uniform thin films on almost all solid substrates as well as at the liquid/air interface. Carbonized polydopamine possesses graphite-like structure and exhibits high electrical conductivity, which makes it a potential carbon-based thin film conductor. However, studies on mechanical behavior of PDA and its derived materials are very limited. In this study, PDA samples were synthesized through self-assembly of dopamine in aqueous solution. Elastic modulus of thin films was measured using the nanoindentation technique. It is shown that the Young’s modulus of PDA thin film increased with increasing heat treatment temperature (up to 600°C). Doping with Cu ions also increased the Young’s modulus of PDA. Furthermore, all PDA thin films, with and without Cu, exhibited creep behavior.more » « less
