Zhao, Zijian, Qin, Yixin, Duan, Jiahui, Lee, YuShan, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, and Ni, Kai. A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping. Retrieved from https://par.nsf.gov/biblio/10628234. IEEE Electron Device Letters 45.12 Web. doi:10.1109/LED.2024.3477510.

Zhao, Zijian, Qin, Yixin, Duan, Jiahui, Lee, YuShan, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, & Ni, Kai. A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping. IEEE Electron Device Letters, 45 (12). Retrieved from https://par.nsf.gov/biblio/10628234. https://doi.org/10.1109/LED.2024.3477510

Zhao, Zijian, Qin, Yixin, Duan, Jiahui, Lee, YuShan, Lim, Suhwan, Kim, Kijoon, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, and Ni, Kai. "A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping". IEEE Electron Device Letters 45 (12). Country unknown/Code not available: IEEE. https://doi.org/10.1109/LED.2024.3477510. https://par.nsf.gov/biblio/10628234.

@article{osti_10628234,
place = {Country unknown/Code not available}, title = {A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping}, url = {https://par.nsf.gov/biblio/10628234}, DOI = {10.1109/LED.2024.3477510}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {45}, number = {12}, publisher = {IEEE}, author = {Zhao, Zijian and Qin, Yixin and Duan, Jiahui and Lee, YuShan and Lim, Suhwan and Kim, Kijoon and Kim, Kwangsoo and Kim, Wanki and Ha, Daewon and Narayanan, Vijaykrishnan and Ni, Kai}, }