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  • Glancing Angle Deposited Nanostructured Tellurium Layer Against Dendrite Formation and Side Reactions in Aqueous Zn-Ion Battery Anode

This content will become publicly available on June 1, 2026

Title: Glancing Angle Deposited Nanostructured Tellurium Layer Against Dendrite Formation and Side Reactions in Aqueous Zn-Ion Battery Anode
Aqueous zinc ion batteries (AZIBs) have considerable potential for energy storage owing to their cost-effectiveness, safety, and environmental sustainability. However, dendrite formation, hydrogen evolution reaction (HER), and corrosion of the bare zinc (B-Zn) anode tremendously impact the performance degradation and premature failure of AZIBs. This study introduces a glancing angle deposition (GLAD) approach during the sputtering process to fabricate tellurium nanostructured (TeNS) at the zinc (Zn) anode to avoid the aforementioned issues with the B-Zn anode. Three different deposition times (5, 10, and 30 min) were used to prepare TeNS at the Zn anode. The morphology, crystallinity, composition, and wettability of the TeNSs were analyzed. The TeNSs served as hydrophilic sites and a protective layer, facilitating uniform Zn nucleation and plating while inhibiting dendrite formation and side reactions. Consequently, the symmetric cell with TeNS deposited on the Zn anode for 10 min (Te@Zn_10 min) demonstrated an enhanced cycling stability of 350 h, the lowest nucleation overpotential of 10.65 mV at a current density of 1 mA/cm2, and an areal capacity of 0.5 mAh/cm2. The observed enhancement in the cycling stability and reduction in the nucleation overpotential can be attributed to the optimal open area fraction of the TeNSs on the Zn surface, which promotes uniform Zn deposition while effectively suppressing side reactions.  more » « less
Award ID(s):
2228891
PAR ID:
10630216
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
MDPI
Date Published:
Journal Name:
Nanomaterials
Volume:
15
Issue:
12
ISSN:
2079-4991
Page Range / eLocation ID:
952
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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