An official website of the United States government
This letter presents a versatile design method for achieving precise frequency and bandwidth control of compact acoustic filters monolithically at millimeter wave (mmWave) in transferred thin-film lithium niobate (LiNbO3). Prototypes are implemented with lateral field excited first-order antisymmetric (A1) mode bulk acoustic resonators (XBARs). The design leverages the in-plane anisotropy of the e15 piezoelectric coefficient in 128° Y-cut LiNbO3, enabling monolithic control of electromechanical coupling ( k2 ) by simply rotating the resonator layout. This allows for filters with customizable fractional bandwidths (FBWs). Additionally, fine-tuning of the center frequency ( fc ) is achieved through selective trimming of the film for series and shunt resonators, enabling a single design to be scaled across frequencies with enhanced fabrication tolerance. To validate the approach, we designed and fabricated a filter centered at 18.6GHz, achieving a low insertion loss (IL) of 1.84 dB, and a precise designed FBW of 9.5%. This platform shows a significant promise for enabling a monolithic filter bank with precise band selection, paving the way for the next generation of mmWave acoustic filters.
more »
« less
This content will become publicly available on June 15, 2026
Miniature High-Coupling Lithium Niobate Thin Film Bulk Acoustic Wave Resonators at 10-30 GHz
Thin film bulk acoustic wave resonators (FBARs) leveraging sputtered aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) films, are a leading commercial solution for compact radio frequency (RF) filters in mobile devices. However, as 5G/6G bands extend beyond 6 GHz, achieving the required thinner piezoelectric film thicknesses below 500 nm presents a significant challenge to high-quality sputtering, resulting in a moderate quality factor (Q). Additionally, AlN/ScAlN platforms are limited by moderate electromechanical coupling (k2), restricting bandwidth. More recently, ultra-thin transferred single-crystal piezoelectric lithium niobate (LN) has enabled lateral field excited resonators (XBAR) at 10-30 GHz. While these devices boast a high Q and k2, they face challenges with low capacitance density, large footprint, and significant electromagnetic (EM) effects. On the other hand, thickness-field excited LN FBARs face challenges with bottom electrode integration. In this work, we implement a transferred LN on aluminum FBAR platform on sapphire wafers with an intermediate amorphous silicon layer without the need for a patterned bottom electrode. The resonators show first order symmetric mode (S1) at 10.5 GHz with a 3-dB series resonance Q of 38 and k2 of 14.1%, alongside third order symmetric mode (S3) at 27 GHz with a 3-dB series resonance Q of 22 and a high k2 of 11.3%. Further analysis shows that higher Q could be achieved by adjusting the low-loss piezoelectric to lossy metal volume ratio.
more »
« less
- Award ID(s):
- 2339731
- PAR ID:
- 10632390
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3315-1409-9
- Page Range / eLocation ID:
- 782 to 785
- Format(s):
- Medium: X
- Location:
- San Francisco, CA, USA
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Although Sc doped AlN (ScAlN) has been used extensively in micro-electro-mechanical systems (MEMS) devices and more recently in optical devices, there have not been thorough studies of its intrinsic optical losses. Here we explore the optical losses of the Sc0.30Al0.70N waveguide system by observing racetrack resonator waveguide quality factors. Using a partial physical etch, we fabricate waveguides and extract propagation losses as low as 1.6 ± 0.3 dB/cm at wavelengths around 1550 nm, mostly dominated by intrinsic material absorption from the Sc0.30Al0.70N thin film layer. The highest quality factor of the resonators was greater than 87,000. The propagation loss value is lower than any value previously published and shows that this material can be broadly used in optical modulators without significant loss.more » « less
-
The exploitation of Brillouin scattering, the scattering of light by sound, has led to demonstrations of a broad spectrum of novel physical phenomena and device functionalities for practical applications. Compared with optomechanical excitation by optical forces, electromechanical excitation of acoustic waves with transducers on a piezoelectric material features intense acoustic waves sufficient to achieve near-unity scattering efficiency within a compact device footprint, which is essential for practical applications. Recently, it has been demonstrated that gigahertz acoustic waves can be electromechanically excited to scatter guided optical waves in integrated photonic waveguides and cavities, leading to intriguing phenomena such as induced transparency and nonreciprocal mode conversion, and advanced optical functionalities. The new integrated electromechanical Brillouin devices, utilizing state-of-the-art nanofabrication capabilities and piezoelectric thin film materials, succeed guided wave acousto-optics with unprecedented device integration, ultrahigh frequency, and strong light-sound interaction. Here, we experimentally demonstrate large-angle (60°) acousto-optic beam deflection of guided telecom-band light in a planar photonics device with electromechanically excited gigahertz (∼11 GHz) acoustic Lamb waves. The device consists of integrated transducers, waveguides, and lenses, all fabricated on a 330 nm thick suspended aluminum nitride membrane. In contrast, conventional guided-wave acousto-optic devices can only achieve a deflection angle of a few degrees at most. Our work shows the promises of such a new acousto-optic device platform, which may lead to potential applications in on-chip beam steering and routing, optical spectrum analysis, high-frequency acousto-optic modulators, RF or microwave filters and delay lines, as well as nonreciprocal optical devices such as optical isolators.more » « less
-
In this work, an Aluminum Scandium Nitride (AlScN) on Diamond Sezawa mode surface acoustic wave (SAW) platform for RF filtering at Ku-band (12-18 GHz) is demonstrated. Thanks to the high acoustic velocity and low-loss diamond substrate, the prototype resonator at 12.9 GHz achieves a high phase velocity (𝑣𝑣p) of 8671 m/s, a maximum Bode-Q of 408, and coupling coefficient (𝑘𝑘eff 2 )of 2.1%, outperforming high-velocity substrates such as SiC and sapphire by more than 20% in velocity. Resonators spanning 8 to 18 GHz are presented. The platform’s high power handling above 12.5 dBm is also experimentally validated.more » « less
-
Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al1−xScxN) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al1−xScxN with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al0.875Sc0.125N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the 1011¯ planes and 11¯00 planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the 1¯212¯ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.more » « less
