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Abstract Previous work that studied hexagonal boron nitride (h‐BN) memristor DC resistive‐switching characteristics is extended to include an experimental understanding of their dynamic behavior upon programming or synaptic weight update. The focus is on the temporal resistive switching response to driving stimulus (programming voltage pulses) effecting conductance updates during training in neural network crossbar implementations. Test arrays are fabricated at the wafer level, enabled by the transfer of CVD‐grown few‐layer (8 layer) or multi‐layer (18 layer) h‐BN films. A comprehensive study of their temporal response under various conditions–voltage pulse amplitude, edge rate (pulse rise/fall times), and temperature–provides new insights into the resistive switching process toward optimized devices and improvements in their implementation of artificial neural networks. The h‐BN memristors can achieve multi‐state operation through ultrafast pulsed switching (< 25 ns) with high energy efficiency (≈10 pJ pulse−1).
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This content will become publicly available on December 16, 2025
Design of a sequestration-based network with tunable pulsing dynamics
Incoherent feedforward networks exhibit the ability to generate temporal pulse behavior. However, exerting control over specific dynamic properties, such as amplitude and rise time, poses a challenge and is intricately tied to the network’s implementation. In this study, we focus on analyzing sequestration-based networks capable of exhibiting pulse behavior. By employing time-scale separation in the fast sequestration regime, we approximate the temporal dynamics of these networks. This approach allows us to establish a mapping that elucidates the impact of varying the kinetic rates and pulse specifications, including amplitude and rise time. Furthermore, we introduce a positive feedback mechanism to regulate the amplitude of the pulsing response.
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- Award ID(s):
- 2107483
- PAR ID:
- 10635054
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3503-1633-9
- Page Range / eLocation ID:
- 6286 to 6291
- Format(s):
- Medium: X
- Location:
- Milan, Italy
- Sponsoring Org:
- National Science Foundation
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