This content will become publicly available on November 4, 2025
                            
                            Design of a Low Parasitic Inductance Paralleled Module for 8.56 kV β—Ga 2 O 3 MOSFET
                        
                    - Award ID(s):
- 2231026
- PAR ID:
- 10639137
- Publisher / Repository:
- IEEE
- Date Published:
- Page Range / eLocation ID:
- 1 to 5
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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