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This content will become publicly available on January 1, 2026

Title: Performance and Scalability of Strain Engineered 2D MoTe 2 Phase-Change Memristors
Award ID(s):
1942815 1936250
PAR ID:
10643100
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
IEEE
Date Published:
Journal Name:
IEEE Journal of the Electron Devices Society
Volume:
13
ISSN:
2168-6734
Page Range / eLocation ID:
343 to 349
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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