Chen, Jiahao, Seshadri, Parthasarathy, Stephenson, Kenneth, Abdullah_Mamun, Md, Bai, Ruixin, Wang, Zehuan, Khan, Asif, and Gupta, Chirag. 64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V). Retrieved from https://par.nsf.gov/biblio/10647765. IEEE Electron Device Letters 46.4 Web. doi:10.1109/LED.2025.3541145.

Chen, Jiahao, Seshadri, Parthasarathy, Stephenson, Kenneth, Abdullah_Mamun, Md, Bai, Ruixin, Wang, Zehuan, Khan, Asif, & Gupta, Chirag. 64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V). IEEE Electron Device Letters, 46 (4). Retrieved from https://par.nsf.gov/biblio/10647765. https://doi.org/10.1109/LED.2025.3541145

Chen, Jiahao, Seshadri, Parthasarathy, Stephenson, Kenneth, Abdullah_Mamun, Md, Bai, Ruixin, Wang, Zehuan, Khan, Asif, and Gupta, Chirag. "64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)". IEEE Electron Device Letters 46 (4). Country unknown/Code not available: IEEE. https://doi.org/10.1109/LED.2025.3541145. https://par.nsf.gov/biblio/10647765.

@article{osti_10647765,
place = {Country unknown/Code not available}, title = {64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)}, url = {https://par.nsf.gov/biblio/10647765}, DOI = {10.1109/LED.2025.3541145}, abstractNote = {Not Available}, journal = {IEEE Electron Device Letters}, volume = {46}, number = {4}, publisher = {IEEE}, author = {Chen, Jiahao and Seshadri, Parthasarathy and Stephenson, Kenneth and Abdullah_Mamun, Md and Bai, Ruixin and Wang, Zehuan and Khan, Asif and Gupta, Chirag}, }