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This content will become publicly available on September 1, 2026

Title: Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications
Award ID(s):
2131972
PAR ID:
10648180
Author(s) / Creator(s):
 ;  ;  ;  ;  
Publisher / Repository:
IEEE
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
72
Issue:
9
ISSN:
0018-9383
Page Range / eLocation ID:
4742 to 4751
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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