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High-Field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
- Award ID(s):
- 2345655
- PAR ID:
- 10654007
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- ACS Nano
- Volume:
- 19
- Issue:
- 17
- ISSN:
- 1936-0851
- Page Range / eLocation ID:
- 16794 to 16802
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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