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1. 67‐1: Invited Paper: High Optical Density, High Efficiency Quantum Dot Photoresist for MicroLED Applications

   https://doi.org/10.1002/sdtp.18316  

   Kambe, Yu; Miranda, Alexis; Zaheer, Nisa; Ratnaweera, Rivi J; Etheridge, Forrest S; Chamberlin, Danielle; Schaller, Richard D; Talapin, Dmitri; Olmeijer, David; Plante, Ilan Jen-La; et al (June 2025, SID Symposium Digest of Technical Papers)

   Quantum dot color converters (QDCCs) are a leading technology for enhancing the gamut and efficiency of displays, notably in QD‐OLED TVs and monitors. However, cadmium‐free QDs require thick layers for effective color conversion. Our novel inorganic photoresist densely packs InP QDs, achieving over 60% PLQY and optical density of 1 at less than 10 µm thickness, advancing QDCCs for high‐performance microLED displays. Patterning of 5 µm pixels with high fidelity is also demonstrated. 

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2. Thin Film Photopatternable Quantum Dot Downconverters with High Optical Density

   https://doi.org/10.36463/idw.2023.0333  

   Kambe, Yu; Miranda, Alexis; Zaheer, Nisa; Ratnaweera, Rivi J; Etheridge, Forrest; Suits, Colin; Tranquilli, Marissa; Schaller, Richard; Talapin, Dmitri; Kambe, Yu (January 2023, Proceedings of the International Display Workshops)

   We demonstrate a scalable fabrication method for microLED displays using photopatternable InP-based QDs. Using photosensitive ligands, we demonstrate pixel resolutions of 10 μm with EQE of >40% in <10 μm thickness. Accelerated reliability is measured and modeled to calculate an expected lifetime of >10k hours for direct-view microLED operating conditions. 

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3. Improved LED output power and external quantum efficiency using InGaN templates

   https://doi.org/10.1063/5.0084273  

   Abdelhamid, Mostafa; Routh, Evyn L.; Hagar, Brandon; Bedair, S. M. (February 2022, Applied Physics Letters)

   InGaN templates have recently attracted interest due to their ability to reduce strain in the quantum wells and to induce a red shift in the emission wavelength. For such technology to be competitive, it should outperform the traditional technology for LEDs grown on GaN substrates and offer improved output characteristics. InGaN based LEDs on In_yGa_1−yN templates with varying In-content of 8% ≤ y ≤ 12% are studied for the same emission wavelength. The electroluminescence, optical output power, and external quantum efficiency of the LEDs are investigated as a function of the In-content in the templates. LEDs on InGaN templates with In-content of 8–10% show better performance than LEDs grown on GaN. This enhancement is attributed to improved radiative recombination as a result of the reduced strain in the quantum wells. However, templates with In-content of ∼10.5% and ∼11% show inferior performance to the LEDs on GaN because the deterioration from the increased defects from the template is stronger than the improvement in the radiative recombination. It can be concluded that the InGaN templates with 8–10% offer a technology for LEDs that is outperforming the traditional GaN technology. 

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4. Easing the chip-to-chip communication bottleneck by leveraging microLED display technology

   Pezeshki, B; Kalman, R; Tselikov, A; Danesh, C (June 2021, Compound semiconductor)

   null (Ed.)

   High-speed optical emitters derived from GaN-based microLED displays can move data at much higher density and lower power than copper, bringing optical connections to the centimetre scale 

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5. Impact of nanopores in porous GaN on LED emission based on FDTD simulations

   https://doi.org/10.1016/j.photonics.2024.101296  

   Zhang, Shijie; Pasayat, Shubhra S (September 2024, Photonics and Nanostructures - Fundamentals and Applications)

   We simulated the light extraction efficiency (LEE) of porous GaN-based InGaN/GaN micrometer-sized light-emitting diodes (μLEDs) emitting within the visible wavelength range using the finite-difference time-domain (FDTD) method. The simulations show that the embedding of a porous GaN layer with 40 % porosity reduces the bottom LEE, while the top side LEE of the μLEDs is increased. In addition, it also exhibits complex scattering properties that affect the microcavity structure of these devices. The LEE and the degree of microcavity structure disruption are related to nanopore size and location. This association weakens with increasing wavelength. Also, a decrease in nanopore size corresponds to a diminished impact on μLED optical properties. Since the porous GaN layer contributes to the deposition of high-quality InGaN, controlling pore size of the porous GaN layer will aid the development of GaN-based red μLEDs and full-color displays. 

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