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   https://doi.org/10.1002/cppb.20105  

   Keen, Patricia; Hastings, Amy Picard; Agrawal, Anurag A.; Van Eck, Joyce (February 2020, Current Protocols in Plant Biology)
2. A z = 0 Multiwavelength Galaxy Synthesis. I. A WISE and GALEX Atlas of Local Galaxies

   https://doi.org/10.3847/1538-4365/ab3925  

   Leroy, Adam K.; Sandstrom, Karin M.; Lang, Dustin; Lewis, Alexia; Salim, Samir; Behrens, Erica A.; Chastenet, Jérémy; Chiang, I-Da; Gallagher, Molly J.; Kessler, Sarah; et al (October 2019, The Astrophysical Journal Supplement Series)
3. Temperature-dependent dielectric behavior of A 6 B 2O17 ( A  = Zr, Hf; B  = Nb, Ta) phases

   https://doi.org/10.1063/5.0219964  

   Spurling, R Jackson; Marakovits, Michael T; Hossain, Arafat; Almishal, Saeed_S I; Perini, Steven E; Lanagan, Michael T; Maria, Jon-Paul (August 2024, Applied Physics Letters)

   We report on temperature-dependent dielectric behavior of disordered ternary A6B2O17 (A = Zr, Hf; B = Nb, Ta)-form oxides in the GHz frequency range. The microwave dielectric properties including relative permittivity, dielectric loss, and temperature-dependent relative permittivity were characterized using cylindrical dielectric resonators using a resonant post measurement technique. Dielectric measurements through the resonant post method approach generally agree with dielectric measurements of A6B2O17 bulk ceramics measured through standard resonant post techniques. Coefficients describing the temperature-dependent relative permittivity for ternary A6B2O17 phases are strongly positive, suggesting contributions to polarizability arising from long-range mechanisms potentially associated with structural disorder. These observations support the working hypothesis that material functionality can be engineered by the chemical diversity and structural disorder possible in high configurational entropy A6B2O17 phases. 

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4. Growth of a -plane BaTiO3 on a -plane β -Ga2O3 by molecular-beam epitaxy

   https://doi.org/10.1063/5.0302145  

   Azizie, Kathy; Pieczulewski, Naomi A; Parker, Nicholas A; Li, Jian V; Hendricks, Nolan S; Liddy, Kyle J; Birkhölzer, Yorick A; Welp, Eric A; Omodt, Luke; Asel, Thaddeus J; et al (January 2026, APL Materials)

   We demonstrate the epitaxial growth of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. Characterization of a 47 nm thick BaTiO3 film by atomic force microscopy reveals a step-and-terrace morphology with unit-cell-high BaTiO3 steps and an rms surface roughness of 0.26 nm. Scanning transmission electron microscopy (STEM) images show that in some regions the β-Ga2O3 substrate terminates with a (100)A plane as it transitions to BaTiO3 and in other regions with a (100)B plane. The (100) BaTiO3 films are fully relaxed and consist of a mixture of two types of a-axis domains: a1 and a2. The orientation relationship determined by X-ray diffraction and confirmed by STEM is (100) BaTiO3 || (100) β-Ga2O3 and [011] BaTiO3||[010] β-Ga2O3. Despite the average linear lattice mismatch of 3.8%, BaTiO3 films with rocking curve full width at half maximum widths as narrow as 28 arc sec are achieved. From capacitance–voltage measurements on a metal–oxide–semiconductor capacitor structure with a-axis BaTiO3 as the oxide layer and Si-doped β-Ga2O3 as the semiconducting layer, we extract a dielectric constant of K11 = 670 for the BaTiO3 epitaxially integrated with (100) β-Ga2O3. We anticipate that this high-K epitaxial dielectric will be useful for electric-field management in β-Ga2O3-based device structures. 

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5. Extended Cation Solubility in the A 6 B 2O17 ( A = Zr, Hf; B = Nb, Ta) Family of Phases

   https://doi.org/10.1093/mam/ozae044.661  

   Jackson_Spurling, R; Maria, Jon-Paul (July 2024, Microscopy and Microanalysis)