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Magneto-intersubband resistance oscillations (MISOs) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields [Formula: see text] tilted from the normal to the 2D electron layer at different temperatures [Formula: see text]. The in-plane component ([Formula: see text]) of the field [Formula: see text] induces magnetic entanglement between subbands, leading to beating in oscillating density of states (DOS) and to MISO suppression. Model of the MISO suppression is proposed. Within the model, a comparison of MISO amplitude in the entangled and disentangled ([Formula: see text]) 2D systems yields both difference frequency of DOS oscillations, [Formula: see text], and strength of the electron–electron interaction, described by parameter [Formula: see text], in the 2D system. These properties are analyzed using two methods, yielding consistent but not identical results for both [Formula: see text] and [Formula: see text]. The analysis reveals an additional angular dependent factor of MISO suppression. The factor is related to spin splitting of quantum levels in magnetic fields.