skip to main content

This content will become publicly available on December 21, 2023

Title: Effect of electron–electron interaction on magnitude of quantum oscillations of dissipative resistance in magnetic fields
Magneto-intersubband resistance oscillations (MISOs) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields [Formula: see text] tilted from the normal to the 2D electron layer at different temperatures [Formula: see text]. The in-plane component ([Formula: see text]) of the field [Formula: see text] induces magnetic entanglement between subbands, leading to beating in oscillating density of states (DOS) and to MISO suppression. Model of the MISO suppression is proposed. Within the model, a comparison of MISO amplitude in the entangled and disentangled ([Formula: see text]) 2D systems yields both difference frequency of DOS oscillations, [Formula: see text], and strength of the electron–electron interaction, described by parameter [Formula: see text], in the 2D system. These properties are analyzed using two methods, yielding consistent but not identical results for both [Formula: see text] and [Formula: see text]. The analysis reveals an additional angular dependent factor of MISO suppression. The factor is related to spin splitting of quantum levels in magnetic fields.
; ; ;
Award ID(s):
Publication Date:
Journal Name:
Journal of Applied Physics
Page Range or eLocation-ID:
Sponsoring Org:
National Science Foundation
More Like this
  1. Observation of intrinsic quantum transport properties of two-dimensional (2D) topological semimetals can be challenging due to suppression of high mobility caused by extrinsic factors introduced during fabrication. We demonstrate current annealing as a method to substantially improve electronic transport properties of 2D topological semimetal flakes. Contact resistance and resistivity were improved by factors up to [Formula: see text] and [Formula: see text], respectively, in devices based on exfoliated flakes of two topological semimetals, ZrSiSe and BaMnSb 2 . Using this method, carrier mobility in ZrSiSe was improved by a factor of 3800, resulting in observation of record-high mobility for exfoliated ZrSiSe. Quantum oscillations in annealed ZrSiSe appeared at magnetic fields as low as 5 T, and magnetoresistance increased by a factor of 10 4 . We argue that a thermal process underlies this improvement. Finally, Raman spectroscopy and analysis of quantum oscillations in ZrSiSe indicate that the phonon modes and Fermi surface area are unchanged by current annealing.
  2. Abstract

    Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by a small Zeeman spin splitting,$$g \mu _B B$$gμBB, comparable to the correlation energy. Then, a change of the Zeeman splitting relative to the correlation energy can lead to a re-ordering between spin polarized, partially polarized, and unpolarized many body ground states at a constant filling factor. We show here that tuning the spin energy can produce fractionally quantized Hall effect transitions that include both a change in$$\nu$$νfor the$$R_{xx}$$Rxxminimum, e.g., from$$\nu = 11/7$$ν=11/7to$$\nu = 8/5$$ν=8/5, and a corresponding change in the$$R_{xy}$$Rxy, e.g., from$$R_{xy}/R_{K} = (11/7)^{-1}$$Rxy/RK=(11/7)-1to$$R_{xy}/R_{K} = (8/5)^{-1}$$Rxy/RK=(8/5)-1, with increasing tilt angle. Further, we exhibit a striking size dependence in the tilt angle interval for the vanishing of the$$\nu = 4/3$$ν=4/3and$$\nu = 7/5$$ν=7/5resistance minima, including “avoided crossing” type lineshape characteristics, and observable shifts of$$R_{xy}$$Rxyat the$$R_{xx}$$Rxxminima- the latter occurring for$$\nu = 4/3, 7/5$$ν=4/3,7/5and the 10/7. The results demonstrate both size dependence and the possibility, not just of competition between different spin polarized states at the same$$\nu$$νand$$R_{xy}$$Rxy, but also the tilt- or Zeeman-energy-dependent- crossover between distinct FQHE associated withmore »different Hall resistances.

    « less
  3. The molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE] x , x [Formula: see text] 2) has garnered interest from the quantum information community due to its excellent coherent magnonic properties and ease of on-chip integration. Despite these attractive properties, a detailed understanding of the electronic structure and mechanism for long-range magnetic ordering have remained elusive due to a lack of detailed atomic and electronic structural information. Previous studies via x-ray absorption near edge spectroscopy and the extended x-ray absorption fine structure have led to various proposed structures, and in general, V[TCNE] x is believed to be a three-dimensional network of octahedrally coordinated V 2+ , each bonded to six TCNE molecules. Here, we elucidate the electronic structure, structural ordering, and degradation pathways of V[TCNE] x films by correlating calculations of density functional theory (DFT) with scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) of V[TCNE] x films. Low-loss EELS measurements reveal a bandgap and an excited state structure that agree quantitatively with DFT modeling, including an energy splitting between apical and equatorial TCNE ligands within the structure, providing experimental results directly backed by theoretical descriptions of the electronic structure driving the robust magnetic ordering in these films. Core-loss EELS confirmsmore »the presence of octahedrally coordinated V +2 atoms. Upon oxidation, changes in the C1s- π* peak indicate that C=C of TCNE is preferentially attacked. Furthermore, we identify a relaxation of the structural ordering as the films age. These results lay the foundation for a more comprehensive and fundamental understanding of magnetic ordering and dynamics in these classes of metal–ligand compounds.« less
  4. Electrons in earth's magnetotail are energized significantly both in the form of heating and in the form of acceleration to non-thermal energies. While magnetic reconnection is considered to play an important role in this energization, it still remains unclear how electrons are energized and how energy is partitioned between thermal and non-thermal components. Here, we show, based on in situ observations by NASA's magnetospheric multiscale mission combined with multi-component spectral fitting methods, that the average electron energy [Formula: see text] (or equivalently temperature) is substantially higher when the locally averaged electric field magnitude [Formula: see text] is also higher. While this result is consistent with the classification of “plasma-sheet” and “tail-lobe” reconnection during which reconnection is considered to occur on closed and open magnetic field lines, respectively, it further suggests that a stochastic Fermi acceleration in 3D, reconnection-driven turbulence is essential for the production and confinement of energetic electrons in the reconnection region. The puzzle is that the non-thermal power-law component can be quite small even when the electric field is large and the bulk population is significantly heated. The fraction of non-thermal electron energies varies from sample to sample between ∼20% and ∼60%, regardless of the electric field magnitude.more »Interestingly, these values of non-thermal fractions are similar to those obtained for the above-the-looptop hard x-ray coronal sources for solar flares.« less
  5. We report on the growth and characterization of a new class of photocathode structures for use as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-nitride materials and are designed to leverage the strong polarization field, which is characteristic of this class of materials when grown in their wurtzite crystal structure, to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in radio frequency guns. A Quantum Efficiency (QE) of about [Formula: see text] and an emitted electrons’ Mean Transverse Energy (MTE) of about 100 meV are measured at a wavelength of 265 nm. In a vacuum level of [Formula: see text] Torr, the QE does not decrease after more than 24 h of continuous operation. The lowest MTE of about 50 meV is measured at 300 nm along with a QE of [Formula: see text]. Surface characterizations reveal a possible contribution to the MTE from surface morphology, calling for more detailed studies.