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Thermoelectric (TE) waste heat recovery has attracted significant attention over the past decades, owing to its direct heat-to-electricity conversion capability and reliable operation. However, methods for application-specific, system-level TE design have not been thoroughly investigated. This work provides detailed design optimization strategies and exergy analysis for TE waste heat recovery systems. To this end, we propose the use of TE system equipped on the exhaust of a gas turbine power plant for exhaust waste heat recovery and use it as a case study. A numerical tool has been developed to solve the coupled charge and heat current equations with temperature-dependent material properties and convective heat transfer at the interfaces with the exhaust gases at the hot side and with the ambient air at the heat sink side. Our calculations show that at the optimum design with 50% fill factor and 6 mm leg thickness made of state-of-the-art Bi2Te3 alloys, the proposed system can reach power output of 10.5 kW for the TE system attached on a 2 m-long, 0.5 × 0.5 m2-area exhaust duct with system efficiency of 5% and material cost per power of 0.23 $/W. Our extensive exergy analysis reveals that only 1% of the exergy content of the exhaust gas is exploited in this heat recovery process and the exergy efficiency of the TE system can reach 8% with improvement potential of 85%.

 

Solar thermoelectric generators (STEGs) often require long thermoelectric (TE) legs and efficient cooling at the cold side to increase the temperature difference across TE legs and, thus, the power output. We investigate the effects of direct side-wall air cooling of TE legs on the power output of STEGs fabricated with high aspect-ratio as well as V-shaped p-type and n-type TE couples without additional heat sinks. Wire-type metallic TE materials are welded together to create V-shape TE leg arrays without additional electrodes and attached to a ceramic plate with a solar absorber on top to complete the STEG. The power generation performance of the STEG is investigated with varying wind speed under concentrated solar irradiation. Finite element simulation is performed to further analyze the heat transfer and thermoelectric performance. We find that although sidewall air cooling helps to keep the cold-side temperature cooler in both natural and forced convection regimes, it can also lower the hot-side temperature to reduce the net temperature difference and, thus, the power output and efficiency. Partial thermal insulation of TE couples can further enhance the power output under forced air convection by keeping the hot side temperature higher. The developed STEG achieves a maximum power density of 230 μW/cm2 and a system efficiency of 0.023% under 10 suns with natural convection. The low efficiency was mainly due to the low ZT of the metallic TE materials used and the unoptimized leg length. Our simulation shows that the system efficiency can be improved to 2.8% with state-of-the-art Bi2Te3 alloys at an optimal leg length. 

We review the recent advances in thermal characterization of micro/nanoscale electronic, optoelectronic, thermal devices based on thermoreflectance imaging. Thermoreflectance imaging is a non-invasive optical technique that can visualize surface thermal response of devices and integrated circuits (IC). Recent advances of the technique have enabled high-resolution, ultra-fast transient thermal imaging with 800 ps temporal resolution. Using visible or UV illumination, spatial resolution of about 200-250 nm can be achieved. Many IC substrates, e.g. Si, GaAs, are transparent to near IR illumination in 1-1.5 μm wavelength range. Through-substrate thermal imaging of flip-chip bonded ICs with micron spatial resolution has been demonstrated. We provide key examples of various devices characterized by the technique such as CMOS ICs, GaN HEMT, nanowire transistors, thin-film solar cells, and micro-thermal cloaking devices. In addition to the validation of electrothermal models, material and fabrication defects can be identified. Finally we discuss the advantages/limitations, and perspective of thermoreflectance imaging technique. 

Thermoelectric devices have great potential as a sustainable energy conversion technology to harvest waste heat and perform spot cooling with high reliability. However, most of the thermoelectric devices use toxic and expensive materials, which limits their application. These materials also require high-temperature fabrication processes, limiting their compatibility with flexible, bio-compatible substrate. Printing electronics is an exciting new technique for fabrication that has enabled a wide array of biocompatible and conformable systems. Being able to print thermoelectric devices allows them to be custom made with much lower cost for their specific application. Significant effort has been directed toward utilizing polymers and other bio-friendly materials for low-cost, lightweight, and flexible thermoelectric devices. Fortunately, many of these materials can be printed using low-temperature printing processes, enabling their fabrication on biocompatible substrates. This review aims to report the recent progress in developing high performance thermoelectric inks for various printing techniques. In addition to the usual thermoelectric performance measures, we also consider the attributes of flexibility and the processing temperatures. Finally, recent advancement of printed device structures is discussed which aims to maximize the temperature difference across the junctions. 

Lanthanide monopnictide (Ln‐V) nanoparticles embedded within III–V semiconductors, specifically in In_0.53Ga_0.47As, are interesting for thermoelectric applications. The electrical conductivity, Seebeck coefficient, and power factor of co‐deposited TbAs:InGaAs over the temperature range of 300–700 K are reported. Using Boltzmann transport theory, it is shown that TbAs nanoparticles in InGaAs matrix give rise to an improved Seebeck coefficient due to an increase in scattering, such as ionized impurity scattering. TbAs nanoparticles act as electron donors in the InGaAs matrix while having minimal effects on electron mobility, and maintain high electrical conductivity. There is further evidence that TbAs nanoparticles act as energy dependent electron scattering sites, contributing to an increased Seebeck coefficient at high temperature. These results show that TbAs:InGaAs nanocomposite thinfilms containing low concentrations, specifically 0.78% TbAs:InGaAs, display high electrical conductivity, reduced thermal conductivity, improved Seebeck coefficient, and demonstrated ZT of power factors as high as 7.1 × 10⁻³W K⁻²m⁻¹and ZT as high as 1.6 at 650 K.