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ABSTRACT This work investigated the effect of isophthalate (iso) content in poly(ethylene terephthalate) (PET) materials on its degree of crystallinity (χ%) and mechanical properties. Melt blends were prepared from virgin (0 iso-wt.%) and bottle-grade (1.7 iso-wt.%) PET and subsequently spun into fibers. The mechanical and crystallinity properties were determined using differential scanning calorimetry (DSC), X-ray diffraction (XRD), and uniaxial tensile testing. The crystallinity results determined from DSC and XRD quantified the relationship between iso-content and χ% in the materials. It was found that melt-mixing of different isophthalate grades had a lesser effect on melting temperature (Tm) and χ% than chemically recycled random copolymers of terephthalate and isophthalate. It was further shown that random copolymers of <0.25 iso-wt.% had comparable crystallinity to the virgin high-modulus low-shrink (HMLS) materials. 

Abstract Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition. This study uses optical microscopy to track the location and internal structure of accumulated memory as a thin film of VO₂is temperature cycled through multiple training subloops. These measurements reveal that the gain of insulator phase fraction between consecutive subloops occurs primarily through front propagation at the insulator‐metal boundaries. By analyzing transition temperature maps, it is found, surprisingly, that the memory is also stored deep inside both insulating and metallic clusters throughout the entire sample, making the metal‐insulator coexistence landscape more rugged. This non‐volatile memory is reset after heating the sample to higher temperatures, as expected. Diffusion of point defects is proposed to account for the observed memory writing and subsequent erasing over the entire sample surface. By spatially mapping the location and character of non‐volatile memory encoding in VO₂, this study results enable the targeting of specific local regions in the film where the full insulator‐to‐metal resistivity change can be harnessed in order to maximize the working range of memory elements for conventional and neuromorphic computing applications.