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The interplay between electronic and lattice degrees of freedom in the insulator-to-metal transition (IMT) in rare-earth nickelates is a long-standing question. In the present work, broadband ultrafast transient reflectivity (TR) spectroscopy is applied to study the photoinduced IMT in ${\mathrm{NdNiO}}_3$. Both coherent and incoherent terms of the TR signal show discontinuous behavior around the same pump fluence value. A drastic drop in the sample reflectivity appearing at $\sim 100$fs timescale in the high excitation density regime indicates the closing of the gap across the IMT. In this regime, coherent phonons associated with the low-temperature crystal phase are not observed even at early time delays, indicating an ultrafast transformation of the lattice potential. A detailed analysis of the coherent phonons indicates a strong coupling between some phonon modes, electronic excitations, and possibly the magnetic order. In this study, we provide insights into the ultrafast dynamics of rare-earth nickelates. 

Abstract Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO₃)_n/(SrTiO₃)_nsuperlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO₃)₉/(LuFe₂O₄)₁superlattices, mapping correlations between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10¹⁴cm⁻², congruent with the formula-unit-thick ferrimagnetic LuFe₂O₄layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO₃and LuFe₂O₄layers, respectively. The results demonstrate pronounced interactions between oxygen vacancies and the multiferroic order in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures. 

We examine the bulk electronic structure of ${\mathrm{Nd}}_3{\mathrm{Ni}}_2{\mathrm{O}}_7$using Ni $2p$core-level hard x-ray photoemission spectroscopy combined with density functional theory $+$dynamical mean-field theory. Our results reveal a large deviation of the Ni $3d$occupation from the formal ${\mathrm{Ni}}^{2.5+}$valency, highlighting the importance of the charge transfer from oxygen ligands. We find that the dominant $d^8$configuration is accompanied by nearly equal contributions from $d^7$and $d^9$states, exhibiting an unusual valence state among Ni-based oxides. Finally, we discuss the Ni $d_{x^2-y^2}$and $d_{z^2}$orbital-dependent hybridization, correlation and local spin dynamics. Published by the American Physical Society2025 

Abstract The layered square-planar nickelates, Nd n +1 Ni n O 2 n +2 , are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd 6 Ni 5 O 12 thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the n  = 3 Ruddlesden-Popper compound, Nd 4 Ni 3 O 10 , and subsequent reduction to the square-planar phase, Nd 4 Ni 3 O 8 . We synthesize our highest quality Nd 4 Ni 3 O 10 films under compressive strain on LaAlO 3 (001), while Nd 4 Ni 3 O 10 on NdGaO 3 (110) exhibits tensile strain-induced rock salt faults but retains bulk-like transport properties. A high density of extended defects forms in Nd 4 Ni 3 O 10 on SrTiO 3 (001). Films reduced on LaAlO 3 become insulating and form compressive strain-induced c -axis canting defects, while Nd 4 Ni 3 O 8 films on NdGaO 3 are metallic. This work provides a pathway to the synthesis of Nd n +1 Ni n O 2 n +2 thin films and sets limits on the ability to strain engineer these compounds via epitaxy.