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Abstract Organic semiconductors enable low‐cost solution processing of optoelectronic devices on flexible substrates. Their use in contemporary applications, however, is sparse due to persistent challenges in achieving the requisite performance levels in a reliable and reproducible manner. A critical bottleneck is the inefficiency associated with charge injection. Here, large‐scale simulations are employed to identify operational windows where key device parameters that are difficult to control experimentally, such as the contact resistance, become less consequential to overall device functionality. This design methodology overcomes injection barrier limitations in organic field‐effect transistors (OFETs), leading to high charge carrier mobility and significantly expanding the range of suitable electrode materials. Leveraging this new understanding, all‐organic, solution‐deposited OFETs are successfully fabricated on flexible substrates. These devices incorporate printed contacts and showcase mobilities exceeding 5 cm² Vs⁻¹. These results provide a route for accessing the fundamental limits of material properties even in the absence of ideal contacts – a critical step in establishing reliable structure/property relationships and optimal material design paradigms. While reducing the injection barrier and contact resistance remains critical for achieving high OFET performance, this work demonstrates a path toward consistently achieving high charge carrier mobility through device geometry design, ultimately reducing processing complexity and cost. 

Organic electronics technologies have attracted considerable interest over the last few decades and have become promising alternatives to conventional, inorganic platforms for specific applications. To fully exploit the touted potential of plastic electronics, however, other prerequisites than only electronic functions need to be fulfiled, including good mechanical stability, ease of processing and high device reliability. A possible method to overcome these issues is the employment of insulating:semiconducting polymer blends, which have been demonstrated to display favourable rheological and mechanical properties, generally provided by the insulating component, without negatively affecting the optoelectronic performance of the semiconductor. Here, we demonstrate that binary blends comprising the semicrystalline high-density polyethylene (HDPE) in combination with hole- and electron-transporting organic semiconductors allow fabrication of p-type and n-type thin-film transistors of notably improved device stability and, in some scenarios, improved device performance. We observe, for example, considerably lower subthreshold slopes and drastically reduced bias-stress effects in devices fabricated with a hole-transporting diketopyrrolopyrrole polymer derivative when blended with HDPE and significantly enhanced charge-carrier mobilities and shelf life in case of transistors made with blends between HDPE and the electron-transporting poly{[ N , N ′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)2,6-diyl]- alt -5,5′-(2,2′-bithiophene)}, i.e. P(NDI2OD-T2), also known as N2200, compared to the neat material, highlighting the broad, versatile benefits blending semiconducting species with a semicrystalline commodity polymer can have. 

Abstract The dissemination of sensors is key to realizing a sustainable, ‘intelligent’ world, where everyday objects and environments are equipped with sensing capabilities to advance the sustainability and quality of our lives—e.g. via smart homes, smart cities, smart healthcare, smart logistics, Industry 4.0, and precision agriculture. The realization of the full potential of these applications critically depends on the availability of easy-to-make, low-cost sensor technologies. Sensors based on printable electronic materials offer the ideal platform: they can be fabricated through simple methods (e.g. printing and coating) and are compatible with high-throughput roll-to-roll processing. Moreover, printable electronic materials often allow the fabrication of sensors on flexible/stretchable/biodegradable substrates, thereby enabling the deployment of sensors in unconventional settings. Fulfilling the promise of printable electronic materials for sensing will require materials and device innovations to enhance their ability to transduce external stimuli—light, ionizing radiation, pressure, strain, force, temperature, gas, vapours, humidity, and other chemical and biological analytes. This Roadmap brings together the viewpoints of experts in various printable sensing materials—and devices thereof—to provide insights into the status and outlook of the field. Alongside recent materials and device innovations, the roadmap discusses the key outstanding challenges pertaining to each printable sensing technology. Finally, the Roadmap points to promising directions to overcome these challenges and thus enable ubiquitous sensing for a sustainable, ‘intelligent’ world. 

Abstract Organic solar cells incorporating non‐fullerene acceptors (NFAs) have reached remarkable power conversion efficiencies of over 18%. Unlike fullerene derivatives, NFAs tend to crystallize from solutions, resulting in bulk heterojunctions that include a crystalline acceptor phase. This must be considered in any morphology‐function models. Here, it is confirmed that high‐performing solution‐processed indacenodithienothiophene‐based NFAs, i.e., ITIC and its derivatives ITIC‐M, ITIC‐2F, and ITIC‐Th, exhibit at least two crystalline forms. In addition to highly ordered polymorphs that form at high temperatures, NFAs arrange into a low‐temperature metastable phase that is readily promoted via solution processing and leads to the highest device efficiencies. Intriguingly, the low‐temperature forms seem to feature a continuous network that favors charge transport despite of a poorly order along the π–π stacking direction. As the optical absorption of the structurally more disordered low‐temperature phase can surpass that of the more ordered polymorphs while displaying comparable—or even higher—charge transport properties, it is argued that such a packing structure is an important feature for reaching highest device efficiencies, thus, providing guidelines for future materials design and crystal engineering activities.