skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


  • Home
  • Search Results
  • Page 1 of 1

Search for: All records

Creators/Authors contains: "Chowdhury, Md Tawsif"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. ; ; ; (, IEEE International Conference on Electro Information Technology)
    Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films. 
    more » « less