Search for: All records

The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO2 films is investigated. HfO2 films were sputtered from a hafnium metal target in an Ar/O2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse width is shown to affect the ion-to-neutral ratio in the depositing species with the shortest pulse durations leading to the highest ion fraction. In situ x-ray diffraction measurements during crystallization demonstrate that the HiPIMS pulse width impacts nucleation and phase formation, with an intermediate pulse width of 110 μs stabilizing the ferroelectric phase over the widest temperature range. Although the pulse width impacts the grain size with the lowest pulse width resulting in the largest grain size, the grain size does not strongly correlate with the phase content or ferroelectric behavior in these films. These results suggest that precise control over the energetics of the depositing species may be beneficial for forming the ferroelectric phase in this material. 

A systematic study of (1− x )Pb(Fe 0.5 Nb 0.5 )O 3 – x BiFeO 3 ( x = 0–0.5) was performed by combining dielectric and electromechanical measurements with structural and microstructural characterization in order to investigate the strengthening of the relaxor properties when adding BiFeO 3 into Pb(Fe 0.5 Nb 0.5 )O 3 and forming a solid solution. Pb(Fe 0.5 Nb 0.5 )O 3 crystalizes in monoclinic symmetry exhibiting ferroelectric-like polarization versus electric field ( P–E ) hysteresis loop and sub-micron-sized ferroelectric domains. Adding BiFeO 3 to Pb(Fe 0.5 Nb 0.5 )O 3 favors a pseudocubic phase and a gradual strengthening of the relaxor behavior of the prepared ceramics. This is indicated by a broadening of the peak in temperature-dependent permittivity, narrowing of P–E hysteresis loops and decreasing size of ferroelectric domains resulting in polar nanodomains for x = 0.20 composition. The relaxor behavior was additionally confirmed by Vogel–Fulcher analysis. For the x ≥ 0.30 compositions, broad high-temperature anomalies are observed in dielectric permittivity versus temperature measurements in addition to the frequency-dispersive peak located close to room temperature. These samples also exhibit pinched P–E hysteresis loops. The observed pinching is most probably related to the reorganization of polar nanoregions under the electric field as shown by synchrotron X-ray diffraction measurements as well as by piezo-response force microscopy analysis, while in part affected by the presence of charged point defects and anti-ferroelectric order, as indicated from rapid cooling experiments and high-resolution transmission electron microscopy, respectively. 

Abstract Lead halide perovskites have recently attracted intensive attention as competitive alternative candidates of legacy compound materials CdTe, CdZnTe, and TlBr for high sensitivity energy‐resolving gamma‐ray detection at room temperature. However, the use of lead in these lead halide perovskites, which is necessary for increasing the stopping power of gamma radiation, poses a serious environmental concern due to the high toxicity of lead. In this regard, environmental‐friendly perovskite‐based gamma‐ray detector materials with key energy‐resolving capabilities are highly desired. Here, the gamma energy‐resolving performance of a new class of all‐inorganic and lead‐free Cs₂AgBiBr₆double perovskite single crystals (SCs) is reported. Two types of Cs₂AgBiBr₆SCs, prepared by Bi‐normal and Bi‐poor precursor solutions, respectively, have been grown. Their mobilities and response to gamma radiation are presented. Density of trap states in Bi‐poor Cs₂AgBiBr₆SCs (2.65 × 10⁹ cm⁻³) is one order of magnitude lower than that in Bi‐normal Cs₂AgBiBr₆SCs (3.85 × 10¹⁰ cm⁻³). Using laser‐induced photocurrent measurements, the obtained mobility–lifetime (μ–τ) product in Bi‐poor Cs₂AgBiBr₆SCs is 1.47 × 10⁻³ cm² V⁻¹, indicating their great potentials for gamma‐ray detection. Further, the fabricated detector based on Bi‐poor Cs₂AgBiBr₆SC shows response to 59.5 keV gamma‐ray with an energy resolution of 13.91%.