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  1. We report the dielectric Properties of HfO 2 -based films in the optical–high frequency range. The demonstrated tunability of the optical dielectric constant of HfO 2 -based compounds is of great relevance for optoelectronic applications, e.g., high-refractive index dielectrics for nanoantenna and optical coatings for electronic displays. Since the optical dielectric constant of HfO 2 is determined by the electronic structure and its crystal environment, we tune the physical properties of HfO 2 films on MgO by adding different dopants. In this work, we aim to determine the influence of doping together with the resulting crystal structure on the optical dielectric constant. Hence, we studied 20 mol. % Y-doped HfO 2 (HYO), Hf 0.5 Zr 0.5 O 2 (HZO), and Hf 0.5 Ce 0.5 O 2 (HCO). Among the dopants, Y 2 O 3 has the lowest, ZrO 2 an intermediate, and CeO 2 the highest real part of the optical dielectric constant. The optical dielectric constant is found to be lowest in the cubic HYO films. An intermediate dielectric constant is found in HZO films that is predominantly in the monoclinic phase, but additionally hosts the cubic phase. The highest dielectric constant is observed in HCO films that are predominantlymore »in the cubic phase with inclusions of the monoclinic phase. The observed trend is in good agreement with the dominant role of the dopant type in setting the optical dielectric constant.« less
    Free, publicly-accessible full text available May 1, 2023
  2. Free, publicly-accessible full text available December 28, 2022
  3. A new two-phase BaTiO 3  : La 0.7 Sr 0.3 MnO 3 nanocomposite system with a molar ratio of 8 : 2 has been grown on single crystal SrTiO 3 (001) substrates using a one-step pulsed laser deposition technique. Vertically aligned nanocomposite thin films with ultra-thin La 0.7 Sr 0.3 MnO 3 pillars embedded in the BaTiO 3 matrix have been obtained and the geometry of the pillars varies with deposition frequency. The room temperature multiferroic properties, including ferromagnetism and ferroelectricity, have been demonstrated. Anisotropic ferromagnetism and dielectric constants have been observed, which can be tuned by deposition frequencies. The tunable anisotropic optical properties originated from the conducting pillars in the dielectric matrix structure, which cause different electron transport paths. In addition, tunable band gaps have been discovered in the nanocomposites. This multiferroic and anisotropic system has shown its great potentials towards multiferroics and non-linear optics.
  4. Here, in ionically conducting Na 0.5 Bi 0.5 TiO 3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance ( R HRS / R LRS ), enabled by an almost constant R HRS of ∼10 9 Ω, and composition-tunable R LRS value modulated by growth temperature. R HRS / R LRS ratios of up to 10 4 and pronounced resistive switching at low voltages (SET voltage of <1.2 V without high-voltage electroforming), strong endurance (no change in resistance states after several 10 3 cycles), uniformity, stable switching and fast switching speed are achieved. Of particular interest is that the best performance is achieved at the lowest growth temperature studied (600 °C), which is opposite to the case of most other perovskite oxides for memristors, where higher growth temperatures are required for optimum performance. This is understood based on the oxygen vacancy control of interfacial switching in NBT, whereas a range of other mechanisms (including filamentary switching)more »occur in other perovskites. The study of NBT has enabled us to determine key parameters for achieving high performance memristors.« less