Advances in creating polar structures in atomic‐layered hafnia‐zirconia (HfxZr1−xO2) films not only augurs extensive growth in studying ferroelectric nanoelectronics and neuromorphic devices, but also spurs opportunities for exploring novel integrated nanoelectromechanical systems (NEMS). Design and implementation of HfxZr1−xO2NEMS transducers necessitates accurate knowledge of elastic and electromechanical properties. Up to now, all experimental approaches for extraction of morphological content, elastic, and electromechanical properties of HfxZr1−xO2are based on solidly mounted structures, highly stressed films, and electroded architectures. Unlike HfxZr1−xO2layers embedded in electronics, NEMS transducers require free‐standing structures with highly contrasted mechanical boundaries and stress profiles. Here, a nanoresonator‐based approach for simultaneous extraction of Young's modulus and residual stress in free‐standing ferroelectric Hf0.5Zr0.5O2films is presented. High quality factor resonance modes of nanomechanical resonators created in predominantly orthorhombic Hf0.5Zr0.5O2films are measured using nondestructive optical transduction. Further, the evolution of morphology during creation of free‐standing Hf0.5Zr0.5O2structures is closely mapped using X‐ray diffraction measurements, clearly showing transformation of ferroelectric orthorhombic to nonpolar monoclinic phase upon stress relaxation. The extracted Young's modulus of 320.0 ± 29.4 GPa and residual stress ofσ = 577.4 ± 24.1 MPa show the closest match with theoretical calculations for orthorhombic Hf0.5Zr0.5O2.
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Optical dielectric properties of HfO 2 -based films
We report the dielectric Properties of HfO 2 -based films in the optical–high frequency range. The demonstrated tunability of the optical dielectric constant of HfO 2 -based compounds is of great relevance for optoelectronic applications, e.g., high-refractive index dielectrics for nanoantenna and optical coatings for electronic displays. Since the optical dielectric constant of HfO 2 is determined by the electronic structure and its crystal environment, we tune the physical properties of HfO 2 films on MgO by adding different dopants. In this work, we aim to determine the influence of doping together with the resulting crystal structure on the optical dielectric constant. Hence, we studied 20 mol. % Y-doped HfO 2 (HYO), Hf 0.5 Zr 0.5 O 2 (HZO), and Hf 0.5 Ce 0.5 O 2 (HCO). Among the dopants, Y 2 O 3 has the lowest, ZrO 2 an intermediate, and CeO 2 the highest real part of the optical dielectric constant. The optical dielectric constant is found to be lowest in the cubic HYO films. An intermediate dielectric constant is found in HZO films that is predominantly in the monoclinic phase, but additionally hosts the cubic phase. The highest dielectric constant is observed in HCO films that are predominantly in the cubic phase with inclusions of the monoclinic phase. The observed trend is in good agreement with the dominant role of the dopant type in setting the optical dielectric constant.
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- PAR ID:
- 10339601
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A
- Volume:
- 40
- Issue:
- 3
- ISSN:
- 0734-2101
- Page Range / eLocation ID:
- 033412
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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