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Creators/Authors contains: "Encomendero, Jimy"

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  1. Abstract Harnessing resonant tunneling transport in III-nitride semiconductors to boost the operating frequencies of electronic and photonic devices, requires a thorough understanding of the mechanisms that limit coherent tunneling injection. Towards this goal, we present a concerted experimental and theoretical study that elucidates the impact of the collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs). Employing our analytical model for polar RTDs, we quantify the width of the resonant-tunneling line shape, demonstrating that the setback helps preserve coherent injection. This design results in consistently higher peak-to-valley-current ratios (PVCRs), obtaining a maximum PVCR = 2.01 at cryogenic temperatures.
  2. Free, publicly-accessible full text available February 1, 2023