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Abstract Wavelength‐selective absorbers (WS‐absorbers) are of interest for various applications, including chemical sensing and light sources. Lithography‐free fabrication of WS‐absorbers can be realized via Tamm plasmon polaritons (TPPs) supported by distributed Bragg reflectors (DBRs) on plasmonic materials. While multifrequency and nearly arbitrary spectra can be realized with TPPs via inverse design algorithms, demanding and thick DBRs are required for high quality‐factors (Q‐factors) and/or multiband TPP‐absorbers, increasing the cost and reducing fabrication error tolerance. Here, high Q‐factor multiband absorption with limited DBR layers (3 layers) is experimentally demonstrated by Tamm hybrid polaritons (THPs) formed by coupling TPPs and Tamm phonon polaritons when modal frequencies are overlapped. Compared to the TPP component, the Q‐factors of THPs are improved twofold, and the angular broadening is also reduced twofold, facilitating applications where narrow‐band and nondispersive WS‐absorbers are needed. Moreover, an open‐source algorithm is developed to inversely design THP‐absorbers consisting of anisotropic media and exemplify that the modal frequencies can be assigned to desirable positions. Furthermore, it is demonstrated that inversely designed THP‐absorbers can realize same spectral resonances with fewer DBR layers than a TPP‐absorber, thus reducing the fabrication complexity and enabling more cost‐effective, lithography‐free, wafer‐scale WS‐absorberss for applications such as free‐space communications and gas sensing. 

Abstract Silicon waveguides have enabled large‐scale manipulation and processing of near‐infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies will further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free‐space wavelength. This paper demonstrates that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can simultaneously enable dual‐band operation at both mid‐infrared (6.5–7.0 µm) and telecom (1.55 µm) frequencies, respectively. The device is realized via the lithography‐free transfer of hBN onto a silicon waveguide, maintaining near‐infrared operation. In addition, mid‐infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) supported in hBN is induced by the index contrast between the silicon waveguide and the surrounding air underneath the hBN, thereby eliminating the need for deleterious etching of the hyperbolic medium. The behavior of HPhP waveguiding in both straight and curved trajectories is validated within an analytical waveguide theoretical framework. This exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on‐chip photonic systems. 

Abstract Polar van der Waals (vdW) crystals that support phonon polaritons have recently attracted much attention because they can confine infrared and terahertz (THz) light to deeply subwavelength dimensions, allowing for the guiding and manipulation of light at the nanoscale. The practical applications of these crystals in devices rely strongly on deterministic engineering of their spatially localized electromagnetic field distributions, which has remained challenging. The polariton interference can be enhanced and tailored by patterning the vdW crystalα‐MoO₃into microstructures that support highly in‐plane anisotropic phonon polaritons. The orientation of the polaritonic in‐plane isofrequency curve relative to the microstructure edges is a critical parameter governing the polariton interference, rendering the configuration of infrared electromagnetic field localizations by enabling the tuning of the microstructure size and shape and the excitation frequency. Thus, the study presents an effective rationale for engineering infrared light flow in planar photonic devices. 

Abstract The biaxial van der Waals semiconductor α‐phase molybdenum trioxide (α‐MoO₃) has recently received significant attention due to its ability to support highly anisotropic phonon polaritons (PhPs)—infrared (IR) light coupled to lattice vibrations—offering an unprecedented platform for controlling the flow of energy at the nanoscale. However, to fully exploit the extraordinary IR response of this material, an accurate dielectric function is required. Here, the accurate IR dielectric function of α‐MoO₃is reported by modeling far‐field polarized IR reflectance spectra acquired on a single thick flake of this material. Unique to this work, the far‐field model is refined by contrasting the experimental dispersion and damping of PhPs, revealed by polariton interferometry using scattering‐type scanning near‐field optical microscopy (s‐SNOM) on thin flakes of α‐MoO₃, with analytical and transfer‐matrix calculations, as well as full‐wave simulations. Through these correlative efforts, exceptional quantitative agreement is attained to both far‐ and near‐field properties for multiple flakes, thus providing strong verification of the accuracy of this model, while offering a novel approach to extracting dielectric functions of nanomaterials. In addition, by employing density functional theory (DFT), insights into the various vibrational states dictating the dielectric function model and the intriguing optical properties of α‐MoO₃are provided.