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We theoretically and experimentally investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with a thickness (55 nm from simulation) that is optimized to guarantee a low reflectivity at the resonance was deposited on nanoporous GaN DBRs fabricated using electrochemical (EC) etching on freestanding semipolar (20 ) GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The experimental results indicate the presence of a TP mode at ∼ 454 nm on the structure after the Ag deposition, which is also supported by theoretical calculations using a transfer-matrix algorithm. The results from mode dispersion with energy-momentum reflectance spectroscopy measurements also support the presence of a TP mode at the metal-nanoporous GaN DBR interface. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (∼ 4-7 nm shift when changing the ambient within the pores from air withn = 1 to isopropanoln = 1.3), suggesting an application of the nanoporous GaN-based TP structure for optical sensing.
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Coupled Tamm Phonon and Plasmon Polaritons for Designer Planar Multiresonance Absorbers
Abstract Wavelength‐selective absorbers (WS‐absorbers) are of interest for various applications, including chemical sensing and light sources. Lithography‐free fabrication of WS‐absorbers can be realized via Tamm plasmon polaritons (TPPs) supported by distributed Bragg reflectors (DBRs) on plasmonic materials. While multifrequency and nearly arbitrary spectra can be realized with TPPs via inverse design algorithms, demanding and thick DBRs are required for high quality‐factors (Q‐factors) and/or multiband TPP‐absorbers, increasing the cost and reducing fabrication error tolerance. Here, high Q‐factor multiband absorption with limited DBR layers (3 layers) is experimentally demonstrated by Tamm hybrid polaritons (THPs) formed by coupling TPPs and Tamm phonon polaritons when modal frequencies are overlapped. Compared to the TPP component, the Q‐factors of THPs are improved twofold, and the angular broadening is also reduced twofold, facilitating applications where narrow‐band and nondispersive WS‐absorbers are needed. Moreover, an open‐source algorithm is developed to inversely design THP‐absorbers consisting of anisotropic media and exemplify that the modal frequencies can be assigned to desirable positions. Furthermore, it is demonstrated that inversely designed THP‐absorbers can realize same spectral resonances with fewer DBR layers than a TPP‐absorber, thus reducing the fabrication complexity and enabling more cost‐effective, lithography‐free, wafer‐scale WS‐absorberss for applications such as free‐space communications and gas sensing.
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- Award ID(s):
- 1852157
- PAR ID:
- 10418718
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 35
- Issue:
- 20
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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