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  1. Abstract We demonstrate a simple, femtosecond-scale wavelength tunable, subwavelength-thick nanostructure that performs efficient wavelength conversion from the infrared to the ultraviolet. The output wavelength can be tuned by varying the input power of the infrared pump beam and/or relative delay of the control beam with respect to the pump beam, and does not require any external realignment of the system. The nanostructure is made of chalcogenide glass that possesses strong Kerr nonlinearity and high linear refractive index, leading to strong field enhancement at Mie resonances. Although, as many other materials, chalcogenide glasses absorb in the ultraviolet range, fundamental phase-locking mechanism between the pump and the inhomogeneous portion of the third-harmonic signal enables ultraviolet transmission with little or no absorption. 
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  2. Abstract Chalcogenide photonics offers unique solutions for a broad range of applications from mid-infrared sensing to integrated, ultrafast, ultrahigh-bandwidth signal processing. However, to date its usage has been limited to the infrared part of the electromagnetic spectrum, thus avoiding ultraviolet and visible ranges due to absorption of chalcogenide glasses. Here, we experimentally demonstrate and report near-infrared to ultraviolet frequency conversion in an As 2 S 3 -based metasurface, enabled by a phase locking mechanism between the pump and the inhomogeneous portion of the third harmonic signal. Due to the phase locking, the inhomogeneous component co-propagates with the pump pulse and encounters the same effective dispersion as the infrared pump, and thus experiences little or no absorption, consequently opening previously unexploited spectral range for chalcogenide glass science and applications, despite the presence of strong material absorption in this range. 
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  3. Abstract

    Enhanced and controlled light absorption, as well as field confinement in optically thin materials, are pivotal for energy‐efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films can support the so‐called epsilon near zero (ENZ) modes in a frequency region of near‐zero permittivity, which can lead to the perfect light absorption and ultrastrong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, engineered absorption and FIE are experimentally demonstrated in aluminum‐doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and the number of macrocycles. It is also demonstrated that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next‐generation tailorable photonic devices based on flat, zero‐index optics.

     
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