skip to main content


The NSF Public Access Repository (NSF-PAR) system and access will be unavailable from 5:00 PM ET until 11:00 PM ET on Friday, June 21 due to maintenance. We apologize for the inconvenience.

Search for: All records

Creators/Authors contains: "Granados-Baez, Marissa"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. With the ever-increasing need for higher data rates, datacom and telecom industries are now migrating to silicon photonics to achieve higher data rates with reduced manufacturing costs. However, the optical packaging of integrated photonic devices with multiple I/O ports remains a slow and expensive process. We introduce an optical packaging technique to attach fiber arrays to a photonic chip in a single shot using CO2laser fusion splicing. We show a minimum coupling loss of 1.1 dB, 1.5 dB, and 1.4 dB per-facet for 2, 4, and 8-fiber arrays (respectively) fused to the oxide mode converters using a single shot from the CO2laser.

    more » « less
  2. The lack of a bulk second-order nonlinearity (χ(2)) in silicon nitride (Si3N4) keeps this low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic (EO) modulation and efficient second harmonic generation (SHG). We demonstrate a successful induction ofχ(2)in Si3N4through electrical poling with an externally-applied field to align the Si-N bonds. This alignment breaks the centrosymmetry of Si3N4, and enables the bulkχ(2). The sample is heated to over 500°C to facilitate the poling. The comparison between the EO responses of poled and non-poled Si3N4, measured using a Si3N4micro-ring modulator, shows at least a 25X enhancement in ther33EO component. The maximumχ(2)we obtain through poling is 0.30pm/V. We observe a remarkable improvement in the speed of the measured EO responses from 3 GHz to 15 GHz (3 dB bandwidth) after the poling, which confirms theχ(2)nature of the EO response induced by poling. This work paves the way for high-speed active functions on the Si3N4platform.

    more » « less