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Creators/Authors contains: "Hickman, Austin Lee"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Express)
    Abstract Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency (fT) of 92.4 GHz and maximum oscillation frequency ( fMAX ) of 134.3 GHz. 
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  2. ; ; ; ; ; ; ; (, Semiconductor Science and Technology)
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