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Title: Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Abstract

Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.

 
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Award ID(s):
1719875
NSF-PAR ID:
10361680
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
36
Issue:
4
ISSN:
0268-1242
Page Range / eLocation ID:
Article No. 044001
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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