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  1. ; ; ; ; ; ; ; ( , 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS))
    A Reset MOSFET is added to a perovskite MOSFET-based photodetector to serve as a current source to mitigate the influence of ionic movement on the performance of the photodetector. With the added MOSFET, the hysteresis is significantly reduced, and the dark current is controllable. The on/off ratio resumes to 10^6 and an ultrasensitive responsivity (over 80,000 A/W) is achieved under only 13 nW/cm^2 red (665 nm) light intensity. 
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  2. ; ; ; ; ; ; ; ( , Advanced Optical Materials)
    Abstract

    Solution‐processed organic–inorganic metal halide perovskites have recently attracted tremendous attention in the photodetector community due to their excellent optoelectronic properties and facile fabrication. The main challenge in perovskite photodetectors (PSPDs) is to achieve high responsivity and fast speed simultaneously. In this work, this challenge is overcome by employing a directly patterned nanograting methylammonium lead iodide (MAPbI3) film in metal‐semiconductor‐metal (MSM) PSPD on interdigitated indium tin oxide (ITO) electrodes. Because of the improved perovskite morphology after directly patterning by nanoimprint lithography, as well as the enhanced electric field intensity by the perovskite nanograting and interdigitated electrodes, the PSPDs have responsivity of 441 A W−1, detectivity of 8.32 × 1012Jones, response time of 10.7 µs, all of which are among the best performances in MSM PSPDs. Moreover, the PSPDs maintain excellent photocurrent performance after 20 days of air exposure. The approach opens a path to manufacturing‐friendly, high‐performance, and reliable PSPDs and paves the way toward perovskite‐based optoelectronic circuits.

     
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