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Abstract A scaling law is demonstrated in the conductivity of gated two-dimensional (2D) materials with tunable concentrations of ionized impurity scatterers. Experimental data is shown to collapse onto a single 2D conductivity scaling (2DCS) curve when the mobility is scaled by r , the relative impurity-induced scattering, and the gate voltage is shifted by V s , a consequence of impurity-induced doping. This 2DCS analysis is demonstrated first in an encapsulated 2D black phosphorus multilayer at T = 100 K with charge trap densities programmed by a gate bias upon cooldown, and next in a Bi 2 Se 3 2D monolayer at room temperature exposed to varying concentrations of gas adsorbates. The observed scaling can be explained using a conductivity model with screened ionized impurity scatterers. The slope of the r  vs.  V s plot defines a disorder-charge specific scattering rate Γ q = d r / d V s equivalent to a scattering strength per unit impurity charge density: Γ q > 0 indicates a preponderance of positively charged impurities with Γ q < 0 for negatively charged. This 2DCS analysis is expected to be applicable in arbitrary 2D materials systems with tunable impurity density, which will advance 2Dmore »materials characterization and improve performance of 2D sensors and transistors.« less

As members of the editorial team at Language Acquisition, we read Kidd and Garcia’s target article with enthusiasm. In our commentary, we outline some specific ideas for how journals can help to alleviate the issues raised by Kidd and Garcia, some of which are in progress or in place at Language Acquisition, and some of which we hope to undertake alongside other journals in the field. We focus on concrete steps, acknowledging that systemic changes, too, will be required to ensure that our science reflects the diversity of languages learned.