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Abstract Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon‐based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon‐compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three‐terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn₃, sputter‐deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room‐temperature TMR effect. First‐principles calculations explain the TMR in terms of the momentum‐resolved spin‐dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. 

Abstract Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient ~130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems. 

The electric field manipulates the spin chirality and skyrmion motion direction in a magnetic heterostructure. 

Abstract Most topological insulators (TIs) discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped topological insulator phases and the gapless TSMs. Recently, we have discovered a family of TSMs in time-reversal invariant spinless systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $${{\mathbb{Z}}}_{4}$$ Z 4 = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups (i.e., P b a m (No.55), P 4/ m b m (No.127), and P 4 2 / m b c (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating the discovery of a higher order topological insulator protected by a glide symmetry. 

A major recent breakthrough in materials science is the emergence of intrinsic magnetism in two-dimensional (2D) crystals, which opens the door to more cutting-edge fields in the 2D family and could eventually lead to novel data-storage and information devices with further miniaturization. Herein we propose an experimentally feasible 2D material, Fe 2 I 2 , which is an intrinsic room-temperature ferromagnet exhibiting perpendicular magnetic anisotropy (PMA). Using first-principles calculations, we demonstrate that single-layer (SL) Fe 2 I 2 is a spin-gapless semiconductor with a spin-polarized Dirac cone and linear energy dispersion in one spin channel, exhibiting promising dissipation-less transport properties with a Fermi velocity up to 6.39 × 10 5 m s −1 . Our results reveal that both strain and ferroelectric polarization switching could induce an out-of- to in-plane spin reorientation in the 2D Fe 2 I 2 layer, revealing its advantage in assembling spintronic devices. In addition, spin–orbit coupling (SOC) triggers a topologically nontrivial band gap of 301 meV with a nonzero Chern number (| C | = 2), giving rise to a robust quantum anomalous Hall (QAH) state. The 2D crystal also exhibits high carrier mobilites of 0.452 × 10 3 and 0.201 × 10 3 cm 2 V −1 s −1 for the electrons and holes, respectively. The combination of these unique properties renders the 2D Fe 2 I 2 ferromagnet a promising platform for high efficiency multi-functional spintronic applications.