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Creators/Authors contains: "Kumar, Mondol Anik"

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  1. ; ; ; (, IEEE Transactions on Nuclear Science)
    Free, publicly-accessible full text available August 1, 2026
  2. ; ; (, IEEE Transactions on Nuclear Science)
    Free, publicly-accessible full text available April 1, 2026
  3. ; (, IEEE)
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  4. ; ; ; ; (, IEEE Transactions on Nuclear Science)
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  5. ; ; (, 2023 IEEE International Memory Workshop (IMW))
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  6. ; ; ; ; ; ; (, 2022 IEEE Radiation Effects Data Workshop (REDW))
    We measure total-ionizing-dose (TID) induced threshold voltage (Vt) loss of a commercial 64-layer triple-levelcell (TLC) 3D NAND memory using user-mode commands. Our experiments show that Vt distributions closely follow Gaussian distributions. At increasing TID, the distributions shift toward lower average values and the distribution widths widen. We calculate exact cell Vt shifts from the pre-irradiation conditions at different TID values. We find that Vt loss (delta_Vt) distributions also follow Gaussian distributions. We also find that delta_Vt values strongly depend on the cell programmed states. 
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