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Thin films of elemental metals play a very important role in modern electronic nano-devices as conduction pathways, spacer layers, spin-current generators/detectors, and many other important functionalities. In this work, by exploiting the chemistry of solid metal-organic source precursors, we demonstrate the molecular beam epitaxy synthesis of elemental Ir and Ru metal thin films. The synthesis of these metals is enabled by thermodynamic and kinetic selection of the metal phase as the metal-organic precursor decomposes on the substrate surface. Film growth under different conditions was studied using a combination of in situ and ex situ structural and compositional characterization techniques. The critical role of substrate temperature, oxygen reactivity, and precursor flux in tuning film composition and quality is discussed in the context of precursor adsorption, decomposition, and crystal growth. Computed thermodynamics quantifies the driving force for metal or oxide formation as a function of synthesis conditions and changes in chemical potential. These results indicate that bulk thermodynamics are a plausible origin for the formation of Ir metal at low temperatures, while Ru metal formation is likely mediated by kinetics.

 

The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging due to their low vapour pressures and low oxidation potentials. Here we show how epitaxial strain can be used as a control knob to enhance metal oxidation. Using Ir as an example, we demonstrate the use of epitaxial strain in engineering its oxidation chemistry, enabling phase-pure Ir or IrO2 films despite using identical growth conditions. The observations are explained using a density-functional-theory-based modified formation enthalpy framework, which highlights the important role of metal-substrate epitaxial strain in governing the oxide formation enthalpy. We also validate the generality of this principle by demonstrating epitaxial strain effect on Ru oxidation. The IrO2 films studied in our work further revealed quantum oscillations, attesting to the excellent film quality. The epitaxial strain approach we present could enable growth of oxide films of hard-to-oxidize elements using strain engineering. 

Perovskite SrIrO 3 films and its heterostructures are very promising, yet less researched, avenues to explore interesting physics originating from the interplay between strong spin–orbit coupling and electron correlations. Elemental iridium is a commonly used source for molecular beam epitaxy (MBE) synthesis of SrIrO 3 films. However, elemental iridium is extremely difficult to oxidize and evaporate while maintaining an ultra-high vacuum and a long mean free path. Here, we calculated a thermodynamic phase diagram to highlight these synthesis challenges for phase-pure SrIrO 3 and other iridium-based oxides. We addressed these challenges using a novel solid-source metal-organic MBE approach that rests on the idea of modifying the metal-source chemistry. Phase-pure, single-crystalline, coherent, epitaxial (001) pc SrIrO 3 films on (001) SrTiO 3 substrate were grown. Films demonstrated semi-metallic behavior, Kondo scattering, and weak antilocalization. Our synthesis approach has the potential to facilitate research involving iridate heterostructures by enabling their atomically precise syntheses. 

Abstract Germanium-based oxides such as rutile GeO 2 are garnering attention owing to their wide band gaps and the prospects of ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP), a metal-organic chemical precursor, as a source of germanium for the demonstration of hybrid molecular beam epitaxy for germanium-containing compounds. We use Sn 1- x Ge x O 2 and SrSn 1- x Ge x O 3 as model systems to demonstrate our synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn 1- x Ge x O 2 on TiO 2 (001) substrates up to x  = 0.54 and coherent perovskite SrSn 1- x Ge x O 3 on GdScO 3 (110) substrates up to x  = 0.16. Characterization and first-principles calculations corroborate that germanium occupies the tin site, as opposed to the strontium site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid molecular beam epitaxy, thus providing a promising route to high-quality perovskite germanate films. 

We investigate the surface electronic structure of SrTiO 3 (STO) films grown by a hybrid molecular beam epitaxy that are both stoichiometric and nonstoichiometric by means of x-ray photoelectron spectroscopy and electron energy loss spectroscopy. Increasing the fraction of the surface that is terminated with an SrO layer is correlated with a decrease in the chemical potential whereby the valence band maximum moves closer to the Fermi level, but without a significant change in the bandgap. Inasmuch as SrO-terminated STO (001) has previously been shown to act as an electron scavenger in which carriers from the bulk are trapped, we argue that the high fraction of SrO in the terminal layer is what lowers the chemical potential in Sr-rich STO. Our experimental results provide important insights into various physical phenomena that can occur on STO (001) surfaces and their effect on bulk electronic properties. 

SrTiO 3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n -STO/undoped STO/ n -STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n -STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant. 

There exists an interplay between antiferrodistortive phase transition and transport in SrTiO 3 via the Hall scattering factor.