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Abstract Oxide‐based memristors are considered promising candidates for next‐generation memory and neuromorphic computing applications owing to their intrinsic resistive switching properties, non‐volatile storage, excellent device plasticity, and compatibility with current complementary metal‐oxide‐semiconductor (CMOS) technology. For the physical implementation of neuromorphic microchips, memristors with high power efficiency, reasonable on/off ratios, excellent device reliability, and enhanced plasticity are essential. In this work, a novel memristor design based on SrTiO₃‐CeO₂(S‐C) vertically aligned nanocomposite (VAN) is proposed, utilizing the highly defective vertical interfaces as migration channels for oxygen vacancies (). More interestingly the interface density (σ_int) and strain can be effectively tuned by the deposition parameters. Comprehensive analyses, including microstructural analysis, electrical characterization, and finite element modeling, reveal that S‐C VAN memristors with high interface density (HID) exhibit superior power efficiency and reduced device‐to‐device (D2D) variation. Additionally, the S‐C HID memristor demonstrates endurance up to 10¹²cycles and retains its resistance states for up to 10⁵s at room temperature. The improved plasticity of the S‐C HID memristor enables better linear modulation of conductance with minimal fluctuation over long cycles and across different devices. Furthermore, artificial neural networks (ANNs) incorporating the S‐C HID memristor achieve high accuracy (>95%) on multiple datasets, underscoring its potential for neuromorphic computing applications. 

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO_x/TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage (I–V) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices. 

My PhD research focuses on intergenerational story sharing for older adults, which is conducted in a Research-through-Design manner. It includes five iterations: It started from an exploration prototype Interactive Gallery (1st iteration), and its findings helped to narrow down my research area and define my research question. To answer it, the 2nd iteration was continued, which was a co-design process of developing prototypes. 3rd and 4th iteration focused on older adults' life stories and memento stories respectively. While the 5th iteration is in the process, which aims to facilitate intergenerational story sharing and preservation in a sustainable manner. 

Using DNA methylation profiles (n= 15,456) from 348 mammalian species, we constructed phyloepigenetic trees that bear marked similarities to traditional phylogenetic ones. Using unsupervised clustering across all samples, we identified 55 distinct cytosine modules, of which 30 are related to traits such as maximum life span, adult weight, age, sex, and human mortality risk. Maximum life span is associated with methylation levels inHOXLsubclass homeobox genes and developmental processes and is potentially regulated by pluripotency transcription factors. The methylation state of some modules responds to perturbations such as caloric restriction, ablation of growth hormone receptors, consumption of high-fat diets, and expression of Yamanaka factors. This study reveals an intertwined evolution of the genome and epigenome that mediates the biological characteristics and traits of different mammalian species.