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Becauseof thehighdielectricstrengthofwater, it isextremelydifficult todischargeplasmainacontrollablewayin the aqueous phase. By using lithographically defined electrodes andmetal/dielectric nanoparticles, we create electric field enhancementthatenablesplasmadischargeinliquidelectrolytesatsignificantlyreducedappliedvoltages.Here,weusehighvoltage (10−30kV)nanosecondpulse(20ns)dischargestogenerateatransientplasmaintheaqueousphase.Anelectrodegeometrywitha radiusofcurvatureofapproximately10μm,agapdistanceof300μm,andanestimatedfieldstrengthof5×106V/cmresultedina reductionintheplasmadischargethresholdfrom28to23kV.Asecondstructurehadaradiusofcurvatureofaround5μmanda gapdistanceof100μmhadanestimatedfieldstrengthof9×106V/cmbutdidnotperformaswellasthelargergapelectrodes. Addinggoldnanoparticles(20nmdiameter) insolutionfurther reducedthethresholdforplasmadischargeto17kVduetothe electricfieldenhancementatthewater/goldinterface,withanestimatedE-fieldenhancementof4×.Addingaluminananoparticles decoratedwithPtreducedtheplasmadischargethresholdto14kV. Inthisscenario, theemergenceofatriplepointatthejuncture ofalumina,Pt,andwaterresultsinthecoexistenceofthreedistinctdielectricconstantsatasingularlocation.Thisleadstoanotable concentrationof electric field, effectively aiding in the initiationof plasma discharge at a reduced voltage. To gain amore comprehensive and detailed understanding of the electric field enhancement mechanism, we performed rigorous numerical simulations.Thesesimulationsprovidevaluableinsights intotheintricateinterplaybetweenthelithographicallydefinedelectrodes, thenanoparticles, andthe resultingelectricfielddistribution, enablingus toextract crucial informationandoptimize thedesign parameters forenhancedperformance. 

Understanding and characterizing the intrinsic properties of charge carrier transport across the interfaces in van der Waals heterostructures is critical to their applications in modern electronics, thermoelectrics, and optoelectronics. However, there are very few published cross-plane resistivity measurements of thin samples because these inherently 2-probe measurements must be corrected for contact and lead resistances. Here, we present a method to extract contact resistances and metal lead resistances by fitting the width dependence of the contact end voltages of top and bottom electrodes of different linewidths to a model based on current crowding. These contributions are then subtracted from the total 2-probe cross-plane resistance to obtain the cross-plane resistance of the material itself without needing multiple devices and/or etching steps. This approach was used to measure cross-plane resistivities of a (PbSe)1(VSe2)1 heterostructure containing alternating layers of PbSe and VSe2 with random in-plane rotational disorder. Several samples measured exhibited a 4 order of magnitude difference between cross-plane and in-plane resistivities over the 6–300 K temperature range. We also reported the first observation of charge density wave transition in the cross-plane transport of (PbSe)1(VSe2)1 heterostructure. The device fabrication process is fully lift-off compatible, and the method developed enables the straightforward measurement of the resistivity anisotropy of most thin film materials with nm thicknesses. 

We demonstrate a substantial modulation of the optical properties of multilayer graphene (∼100 layers) using a simple device consisting of a multilayer graphene/polymer electrolyte membrane/gold film stack. Applying a voltage of 3–4 V drives the intercalation of anion [TFSI]− [ion liquid diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME][TFSI]] resulting in the reversible modulation of the properties of this optically dense material. Upon intercalation, we observe an abrupt shift of 35 cm−1 in the G band Raman mode, an abrupt increase in FTIR reflectance over the wavelength range from 1.67 to 5 μm (2000–6000 cm−1), and an abrupt increase in luminescent background observed in the Raman spectra of graphene. All of these abrupt changes in the optical properties of this material arise from the intercalation of the TFSI− ion and the associated change in the free carrier density (Δn = 1020 cm−3). Suppression of the 2D band Raman mode observed around 3 V corresponds to Pauli blocking of the double resonance Raman process and indicates a modulation of the Fermi energy of ΔEF = 1.1 eV.