NSF PAR Search | NSF Public Access Repository

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics

https://doi.org/10.35848/1347-4065/ac2918

Liu, Xianhe; Pandey, Ayush; Mi, Zetian (October 2021, Japanese Journal of Applied Physics)

Full Text Available
Emerging Applications of III‐Nitride Nanocrystals

https://doi.org/10.1002/pssa.201900885

Liu, Xianhe; Chowdhury, Faqrul A.; Vanka, Srinivas; Chu, Sheng; Mi, Zetian (April 2020, physica status solidi (a))

Full Text Available
An electrically pumped surface-emitting semiconductor green laser

https://doi.org/10.1126/sciadv.aav7523

Ra, Yong-Ho; Rashid, Roksana Tonny; Liu, Xianhe; Sadaf, Sharif Md.; Mashooq, Kishwar; Mi, Zetian (January 2020, Science Advances)

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm 2 , which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.
more » « less
Full Text Available
AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

https://doi.org/10.1364/PRJ.7.000B12

Liu, Xianhe; Mashooq, Kishwar; Laleyan, David A.; Reid, Eric T.; Mi, Zetian (January 2019, Photonics Research)

Full Text Available
Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

https://doi.org/10.1002/aelm.202000337

Wu, Yuanpeng; Laleyan, David A.; Deng, Zihao; Ahn, Chihyo; Aiello, Anthony F.; Pandey, Ayush; Liu, Xianhe; Wang, Ping; Sun, Kai; Ahmadi, Elaheh; et al (September 2020, Advanced Electronic Materials)

Full Text Available

Search for: All records