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We report on the structural, chemical, and optical properties of titanium sesquioxide Ti2O3 thin films on single-crystal sapphire substrates by pulsed laser deposition. The thin film of Ti2O3 on sapphire exhibits light absorption of around 25%–45% in the wavelength range of 2–10 μm. Here, we design an infrared photodetector structure based on Ti2O3, enhanced by a resonant metasurface, to improve its light absorption in mid-wave and long-wave infrared windows. We show that light absorption in the mid-wave infrared window (wavelength 3–5 μm) in the active Ti2O3 layer can be significantly enhanced from 30%–40% to more than 80% utilizing a thin resonant metasurface made of low-loss silicon, facilitating efficient scattering in the active layer. Furthermore, we compare the absorptance of the Ti2O3 layer with that of conventional semiconductors, such as InSb, InAs, and HgCdTe, operating in the infrared range with a wavelength of 2–10 μm and demonstrate that the absorption in the Ti2O3 film is significantly higher than in these conventional semiconductors due to the narrow-bandgap characteristics of Ti2O3. The proposed designs can be used to tailor the wavelengths of photodetection across the near- and mid-infrared ranges.