The advent of chirped-pulse amplification in the 1980s and femtosecond Ti:sapphire lasers in the 1990s enabled transformative advances in intense laser–matter interaction physics. Whereas most of experiments have been conducted in the limited near-infrared range of 0.8–1 μm, theories predict that many physical phenomena such as high harmonic generation in gases favor long laser wavelengths in terms of extending the high-energy cutoff. Significant progress has been made in developing few-cycle, carrier-envelope phase-stabilized, high-peak-power lasers in the 1.6–2 μm range that has laid the foundation for attosecond X ray sources in the water window. Even longer wavelength lasers are becoming available that are suitable to study light filamentation, high harmonic generation, and laser–plasma interaction in the relativistic regime. Long-wavelength lasers are suitable for sub-bandgap strong-field excitation of a wide range of solid materials, including semiconductors. In the strong-field limit, bulk crystals also produce high-order harmonics. In this review, we first introduce several important wavelength scaling laws in strong-field physics, then describe recent breakthroughs in short- (1.4–3 μm), mid- (3–8 μm), and long-wave (8–15 μm) infrared laser technology, and finally provide examples of strong-field applications of these novel lasers. Some of the broadband ultrafast infrared lasers will have profound effects on medicine, environmental protection, and national defense, because their wavelengths cover the water absorption band, the molecular fingerprint region, as well as the atmospheric infrared transparent window.
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Narrow-bandgap titanium sesquioxide with resonant metasurfaces for enhanced infrared absorption
We report on the structural, chemical, and optical properties of titanium sesquioxide Ti2O3 thin films on single-crystal sapphire substrates by pulsed laser deposition. The thin film of Ti2O3 on sapphire exhibits light absorption of around 25%–45% in the wavelength range of 2–10 μm. Here, we design an infrared photodetector structure based on Ti2O3, enhanced by a resonant metasurface, to improve its light absorption in mid-wave and long-wave infrared windows. We show that light absorption in the mid-wave infrared window (wavelength 3–5 μm) in the active Ti2O3 layer can be significantly enhanced from 30%–40% to more than 80% utilizing a thin resonant metasurface made of low-loss silicon, facilitating efficient scattering in the active layer. Furthermore, we compare the absorptance of the Ti2O3 layer with that of conventional semiconductors, such as InSb, InAs, and HgCdTe, operating in the infrared range with a wavelength of 2–10 μm and demonstrate that the absorption in the Ti2O3 film is significantly higher than in these conventional semiconductors due to the narrow-bandgap characteristics of Ti2O3. The proposed designs can be used to tailor the wavelengths of photodetection across the near- and mid-infrared ranges.
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- Award ID(s):
- 2418519
- PAR ID:
- 10577861
- Publisher / Repository:
- AIP Publishing
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 125
- Issue:
- 26
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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