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Cellulose-based materials have gained increasing attention for the development of low cost, eco-friendly technologies, and more recently, as functional materials in triboelectric nanogenerators (TENGs). However, the low output performance of cellulose-based TENGs severely restricts their versatility and employment in emerging smart building and smart city applications. Here, we report a high output performance of a commercial cellulosic material-based energy harvesting floor (CEHF). Benefiting from the significant difference in the triboelectric properties between weighing and nitrocellulose papers, high surface roughness achieved by a newly developed mechanical exfoliation method, and large overall contact area via a multilayered device structure, the CEHF (25 cm × 15 cm × 1.2 cm) exhibits excellent output performance with a maximum output voltage, current, and power peak values of 360 V, 250 μA, and 5 mW, respectively. It can be directly installed or integrated with regular flooring products to effectively convert human body movements into electricity and shows good durability and stability. Moreover, a wireless transmission sensing system that can produce a 1:1 footstep-to-signal (transmitted and received) ratio is instantaneously powered by a TENG based entirely on cellulosic materials for the first time. This work provides a feasible and effective way to utilize commercial cellulosic materials to construct self-powered wireless transmission systems for real-time sensing applications. 

Abstract The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few‐nanometer amorphous Al₂O₃layers onto atomically thin single‐crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al₂O₃facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high‐resistance state follows Poole–Frenkel emission, and in the the low‐resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low‐resistance state is estimated to be ≈2400 cm²V⁻¹s⁻¹, which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high‐performance memristor devices.