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Resistive Random Access Memory (RRAM) devices hold promise as a key enabler technology for energy-efficient, in-memory, and brain-inspired computing paradigms, with the potential to significantly enhance high-performance computing applications. However, the widespread adoption of RRAM technology in high-performance computing applications is hindered by non-ideal device metrics and various reliability challenges. RRAM devices are reported to exhibit critical device-to-device (D2D) and cycle-to-cycle (C2C) variability. In this paper, we investigate D2D and C2C variabilities of Tantalum Oxide RRAM devices and explore potentiation, depression, and endurance dynamics under varying operation conditions. Our ultimate goal is to address performance and reliability issues associated with the oxide-based RRAM device technology and facilitate its broader implementation in future computing applications. 

Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films.