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An integration of perovskite and cadmium telluride (CdTe) solar cells in a tandem configuration has the potential to yield efficient thin-film tandem solar cells. Owing to the promise of higher efficiency at low cost, the presented study aims to explore the potential for combining this commercially established CdTe photovoltaics (PV) with next-generation perovskite PV. Here, we developed four-terminal (4-T) CdTe/perovskite tandem solar cells, starting with 18.3% efficient near-infrared-transparent perovskite solar cells (NIR-TPSCs) with an average transmission (Tavg) of 24.76% in the 300−900 nm wavelength range. These were then integrated with 19.56% efficient opaque CdTe solar cells, achieving 23.42% efficiency in a 4-T tandem configuration. Additionally, using a refractive index matching liquid increases the overall power conversion efficiency (PCE)to 24.2%. This pioneering achievement marks the first instance of a 4-T CdTe/perovskite thin-film tandem solar cell exceeding a PCE of 24.2%, a significant 123.72% increase in overall PCE. 

This paper investigates the suitability of CdTe photovoltaic cells to be used as power sources for wireless sensors located in buildings. We fabricate and test a CdTe photovoltaic cell with a transparent conducting oxide front contact that provides for high photocurrents and low series resistance at low light intensities - and measure the photovoltaic response of this cell across five orders of magnitude of AM1.5G light intensity. Efficiencies of 10% and 17.1% are measured under ~1 W/m2 AM1.5G and LED irradiance respectively, the highest values for a CdTe device under ambient lighting measured to date. We use our results to assess the potential of CdTe for internet of things devices from an optoelectronic, as well as a techno-economic perspective, considering its established manufacturing know-how, potential for low-cost, proven long-term stability and issues around the use of cadmium. 

CdTe photovoltaic devices with a ZnTe back contact have the potential to improve device performance and stability. After performing a sweep of ZnTe deposition and annealing temperatures, device performances were evaluated. Copper doping was performed after the ZnTe depositions by sublimating CuCl. Initial results indicate that ZnTe deposited and annealed for 20 minutes at 250°C improved device performance in terms of fill factor, J SC , and V OC as compared to other deposition temperatures. Copper doping also impacted device performance and a longer copper treatment on ZnTe led to a 17.6% device.