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Defects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the “dressing” of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films—point defects externally induced via ${\mathrm{He}}^{2+}$bombardment, and extended quasi-one-dimensional $a$domains formed in response to internal strains. The $a$domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the ${\mathrm{He}}^{2+}$bombarded samples orient and align to impose further directional pinning, screening the effect of $a$domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices. Published by the American Physical Society2024