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Title: Interplay between Point and Extended Defects and Their Effects on Jerky Domain-Wall Motion in Ferroelectric Thin Films
Defects have a significant influence on the polarization and electromechanical properties of ferroelectric materials. Statistically, they can be seen as random pinning centers acting on an elastic manifold, slowing domain-wall propagation and raising the energy required to switch polarization. Here we show that the “dressing” of defects can lead to unprecedented control of domain-wall dynamics. We engineer defects of two different dimensionalities in ferroelectric oxide thin films—point defects externally induced via He 2 + bombardment, and extended quasi-one-dimensional a domains formed in response to internal strains. The a domains act as extended strong pinning sites (as expected) imposing highly localized directional constraints. Surprisingly, the induced point defects in the He 2 + bombarded samples orient and align to impose further directional pinning, screening the effect of a domains. This defect interplay produces more uniform and predictable domain-wall dynamics. Such engineered interactions between defects are crucial for advancements in ferroelectric devices. Published by the American Physical Society2024  more » « less
Award ID(s):
2102895
PAR ID:
10618404
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
American Physical Society
Date Published:
Journal Name:
Physical Review Letters
Volume:
133
Issue:
10
ISSN:
0031-9007
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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