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Metal halide perovskite (MHP) solar cells are promising aerospace power sources given their potential as inexpensive, lightweight, and resilient solar electricity generators. Herein, the intrinsic radiation tolerance of unencapsulated methylammonium lead iodide/chloride (CH3NH3PbI3-xClx) films was isolated. Spatially resolved photoluminescence (PL) spectroscopy and confocal microscopy revealed the fundamental defect physics through optical changes as films were irradiated with 4.5 MeV neutrons and 20 keV protons at fluences between 5×1010 and 1×1016 p+/cm2. As proton radiation increased beyond 1×1013 p+/cm2, defects formed in the film, causing both a decrease in photoluminescence intensity and a 30% increase in surface darkening. All proton irradiated films additionally exhibited continuous increase of energy bandgaps and decreasing charge recombination lifetimes with increasing proton fluences. These optical changes in the absorber layer precede performance declines detectable in standard current-voltage measurements of complete solar cell devices and therefore have the potential of serving as early indicators of radiation tolerance. 

Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions. We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and IEL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05–0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may ‘‘heal’’ devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors.