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Low temperature, highly stable ZnO thin-film transistors

https://doi.org/10.1016/j.mee.2023.112063

Rodriguez-Davila, Rodolfo A. ; Chapman, Richard A. ; Shamsi, Zeshaan H. ; Castillo, S.J. ; Young, Chadwin D. ; Quevedo-Lopez, Manuel A. ( July 2023 , Microelectronic Engineering)

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Electrical property-microstructure of copper interconnects printed by localized pulsed electrodeposition (l-PED)

https://doi.org/10.1016/j.matlet.2022.133364

Bhuiyan, Md Emran ; Wang, Chao ; Arellano-Jimenez, M. Josefina ; Waliullah, Mohammad ; Quevedo-Lopez, Manuel ; Bernal, Rodrigo ; Minary-Jolandan, Majid ( January 2023 , Materials Letters)

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Understanding the Effects of Low-Temperature Passivation and Annealing on ZnO TFTs Test Structures

https://doi.org/10.1109/ICMTS.2019.8730965

Rodriguez-Davila, Rodolfo A. ; Bolshakov, Pavel ; Young, Chadwin D. ; Quevedo-Lopez, Manuel ( March 2019 , 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS))

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Positive Bias Instability in ZnO TFTs with Al 2 O 3 Gate Dielectric

https://doi.org/10.1109/IRPS.2019.8720547

Bolshakov, Pavel ; Rodriguez-Davila, Rodolfo A. ; Quevedo-Lopez, Manuel ; Young, Chadwin D. ( March 2019 , 2019 IEEE International Reliability Physics Symposium (IRPS))

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Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric

https://doi.org/10.1109/IPFA.2018.8452171

Rodriguez-Davila, Rodolfo A. ; Mejia, Israel ; Quevedo-Lopez, Manuel ; Young, Chadwin D. ( July 2018 , 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA))

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Electrical characterization of process induced effects on non-silicon devices

https://doi.org/10.1109/ICICDT.2018.8399784

Young, Chadwin D. ; Bolshakov, Pavel ; Rodriguez-Davila, Rodolfo A. ; Zhao, Peng ; Khosravi, Ava ; Mejia, Israel ; Quevedo-Lopez, Manuel ; Hinkle, Christopher L. ; Wallace, Robert M. ( June 2018 , 2018 International Conference on IC Design & Technology (ICICDT))

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Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

https://doi.org/10.1063/1.5008753

Avila-Avendano, Jesus ; Quevedo-Lopez, Manuel ; Young, Chadwin ( February 2018 , Applied Physics Letters)
Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories

https://doi.org/10.1002/aelm.201900979

Zhuang, Pingping ; Lin, Weiyi ; Ahn, Jaehyun ; Catalano, Massimo ; Chou, Harry ; Roy, Anupam ; Quevedo‐Lopez, Manuel ; Colombo, Luigi ; Cai, Weiwei ; Banerjee, Sanjay_K ( November 2019 , Advanced Electronic Materials)

Abstract
Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high‐density, cross‐point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non‐volatile nonpolar RS phenomenon of hBN‐based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈10³cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re‐set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology.

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