Search for: All records

A bias-free photochemical diode, in which a p-type photocathode is connected to an n-type photoanode to harness light for driving photoelectrochemical reduction and oxidation pairs, serves as a platform for realizing light-driven fuel generation from CO2. However, the conventional design, in which cathodic CO2 reduction is coupled with the anodic oxygen evolution reaction (OER), requires substantial energy input. Here we present a photochemical diode device that harnesses red light (740 nm) to simultaneously drive biophotocathodic CO2-to-multicarbon conversion and photoanodic glycerol oxidation as an alternative to the OER to overcome the above thermodynamic limitation. The device consists of an efficient CO2-fixing microorganism, Sporomusa ovata, interfaced with a silicon nanowire photocathode and a Pt–Au-loaded silicon nanowire photoanode. This photochemical diode operates bias-free under low-intensity (20 mW cm−2) red light irradiation with ~80% Faradaic efficiency for both the cathodic and anodic products. This work provides an alternative photosynthetic route to mitigate excessive CO2 emissions and efficiently generate value-added chemicals from CO2 and glycerol 

Photocathodic conversion of NAD+ to NADH cofactor is a promising platform for activating redox biological catalysts and enzymatic synthesis using renewable solar energy. However, many photocathodes suffer from low photovoltage, consequently requiring a high cathodic bias for NADH production. Here, we report an n+p-type silicon nanowire (n+p-SiNW) photocathode having a photovoltage of 435 mV to drive energy-efficient NADH production. The enhanced band bending at the n+/p interface accounts for the high photovoltage, which conduces to a benchmark onset potential [0.393 V vs the reversible hydrogen electrode (VRHE)] for SiNW-based photocathodic NADH generation. In addition, the n+p-SiNW nanomaterial exhibits a Faradaic efficiency of 84.7% and a conversion rate of 1.63 μmol h–1 cm–1 at 0.2 VRHE, which is the lowest cathodic potential to achieve the maximum productivity among SiNW-sensitized cofactor production. 

Alloys of tungsten tetraboride (WB4) with the addition of C and Si were prepared by arc-melting of the constituent elements. The phase purity was established by powder X-ray diffraction (PXRD) and surface morphology by scanning electron microscopy (SEM) analysis. Vickers hardness measurements showed hardness enhancement for alloys with a nominal composition of (W0.98Si0.02):11.6B and (W0.95C0.05):11.6B of 52.2 ± 3.0 and 50.5 ± 2.5 GPa, respectively, compared to 41.2 ± 1.4 GPa for pure WB4. (W0.92Zr0.08):11.6B was determined in previous work to have a hardness of 55.9 ± 2.8 GPa. Bulk moduli were calculated following analysis of high-pressure radial diffraction data and were determined to be 329 ± 4 (K0′ = 2) and 390 ± 9 (K0′ = 0.6) GPa for 8 atom % Zr and 5 atom % C-doping, respectively, compared to 326–339 GPa for pure WB4. Computational analysis was used to determine the dopant positions in the crystal structure, and it was found that Zr primarily substitutes W in the 2c position, Si substitutes for the entire B3 trimers, and C inserts in the Bhex-layer. The hardness enhancement in the case of Zr-doping is attributed primarily to extrinsic hardness effects (nanograin morphology), in the case of C─to intrinsic effects (interlayer bond strengthening), and in the intermediate case of Si─to both intrinsic and extrinsic effects (bond strengthening and fine surface morphology).