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The compression behavior of the hexagonal AlB2 phase of Hafnium Diboride (HfB2) was studied in a diamond anvil cell to a pressure of 208 GPa by axial X-ray diffraction employing platinum as an internal pressure standard. The deformation behavior of HfB2 was studied by radial X-ray diffraction technique to 50 GPa, which allows for measurement of maximum differential stress or compressive yield strength at high pressures. The hydrostatic compression curve deduced from radial X-ray diffraction measurements yielded an ambient-pressure volume V0 = 29.73 Å3/atom and a bulk modulus K0 = 282 GPa. Density functional theory calculations showed ambient-pressure volume V0 = 29.84 Å3/atom and bulk modulus K0 = 262 GPa, which are in good agreement with the hydrostatic experimental values. The measured compressive yield strength approaches 3% of the shear modulus at a pressure of 50 GPa. The theoretical strain-stress calculation shows a maximum shear stress τmax~39 GPa along the (1−10) [110] direction of the hexagonal lattice of HfB2, which thereby can be an incompressible high strength material for extreme-environment applications.
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Hardening in Tungsten Tetraboride with the Addition of Carbon, Zirconium, and Silicon: Intrinsic vs Extrinsic Effects
Alloys of tungsten tetraboride (WB4) with the addition of C and Si were prepared by arc-melting of the constituent elements. The phase purity was established by powder X-ray diffraction (PXRD) and surface morphology by scanning electron microscopy (SEM) analysis. Vickers hardness measurements showed hardness enhancement for alloys with a nominal composition of (W0.98Si0.02):11.6B and (W0.95C0.05):11.6B of 52.2 ± 3.0 and 50.5 ± 2.5 GPa, respectively, compared to 41.2 ± 1.4 GPa for pure WB4. (W0.92Zr0.08):11.6B was determined in previous work to have a hardness of 55.9 ± 2.8 GPa. Bulk moduli were calculated following analysis of high-pressure radial diffraction data and were determined to be 329 ± 4 (K0′ = 2) and 390 ± 9 (K0′ = 0.6) GPa for 8 atom % Zr and 5 atom % C-doping, respectively, compared to 326–339 GPa for pure WB4. Computational analysis was used to determine the dopant positions in the crystal structure, and it was found that Zr primarily substitutes W in the 2c position, Si substitutes for the entire B3 trimers, and C inserts in the Bhex-layer. The hardness enhancement in the case of Zr-doping is attributed primarily to extrinsic hardness effects (nanograin morphology), in the case of C─to intrinsic effects (interlayer bond strengthening), and in the intermediate case of Si─to both intrinsic and extrinsic effects (bond strengthening and fine surface morphology).
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- Award ID(s):
- 2312942
- PAR ID:
- 10512059
- Publisher / Repository:
- ACS Chemistry of Materials
- Date Published:
- Journal Name:
- Chemistry of Materials
- Volume:
- 36
- Issue:
- 7
- ISSN:
- 0897-4756
- Page Range / eLocation ID:
- 3233 to 3245
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1021/acs.chemmater.3c03092
